QRT812D 반도체 회로 부품 판매점
PLANAR STRUCTURED SUPERFAST RECOVERY RECTIFIERS
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 Pan Jit International |
PQRT812 \ QRT812F \ QRT812D
PLANAR STRUCTURED SUPERFAST RECOVERY RECTIFIERS
Voltage
Features
1200 V Current
8A
QRT812 TO-220AC
Planar structure with EPI wafer
Hyperfast recovery time, reduced Qrr and soft recovery
For PFC CCM operation
Low leakage current
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
Flame Retardant Epoxy Molding Compound
Exceeds environmental standards of MIL-S-19500/228
Lead free in compliance with EU RoHS 2011/65/EU directive
QRT812F ITO-220AC
Mechanical Data
Case: TO-220AC, ITO-220AC, TO-263 package
Terminals: solder plated, solderable per MIL-STD-750,Method 2026
TO-220AC Weight: 0.067 ounces, 1.89 grams
ITO-220AC Weight: 0.055 ounces, 1.56 grams.
TO-263 Weight: 0.051 ounces, 1.46 grams.
Marking: Part number
QRT812D TO-263
Maximum
Ratings
And
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL
VALUE
Maximum repetitive peak reverse voltage
VRRM
1200
Maximum rms voltage
VRMS
840
Maximum dc blocking voltage
VR 1200
Maximum average forward rectified current
Peak forward surge current : 8.3ms single half sine-
wave superimposed on rated load
IF(AV)
IFSM
8
90
TO-220AC (Note 1)
2
Typical thermal resistance
ITO-220AC (Note 1)
TO-263 (Note 1)
RθJC
5.5
2
Operating junction temperature range
TJ -55 to +175
Storage temperature range
TSTG
-55 to +175
Note : 1. Device mounted on a infinite heatsink , then measured the center of the marking side.
UNIT
V
V
V
A
A
oC/W
oC
oC
February 5,2015-REV.00
Page 1
PQRT812 \ QRT812F \ QRT812D
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Breakdown voltage
Instantaneous forward
voltage
Reverse current
Reverse recovery time
Peak recovery current
Reverse recovery
charge
SYMBOL
VBR
VF
IR
TRR
IRRM
QRR
TEST CONDITION
IR=100A
TJ=25oC
IF=1A
IF=5A
IF=8A
TJ=25oC
IF=1A
IF=5A
IF=8A
VR=1200V
TJ=125oC
TJ=25oC
TJ=125oC
IF=1A
VR=30V
di/dt=100A/s
TJ=25oC
IF=8A
VR=400V
di/dt=200A/s
TJ=25oC
IF=8A
VR=400V
di/dt=200A/s
TJ=25oC
IF=8A
VR=400V
di/dt=200A/s
TJ=25oC
MIN.
1200
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
1.46
2.06
2.29
0.99
1.58
1.82
-
5
-
45
3.9
87.7
MAX.
-
-
-
3.2
-
-
-
3
-
UNITS
V
V
V
A
A
40 ns
- ns
-A
- nC
February 5,2015-REV.00
Page 2
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PDF 파일 내의 페이지 : 총 7 페이지
제조업체: Pan Jit International
( panjit )
QRT812D rectifier
데이터시트 다운로드 :
[ QRT812D.PDF ]
[ QRT812D 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
QRT812
PLANAR STRUCTURED SUPERFAST RECOVERY RECTIFIERS - Pan Jit International
QRT812D
PLANAR STRUCTURED SUPERFAST RECOVERY RECTIFIERS - Pan Jit International
QRT812F
PLANAR STRUCTURED SUPERFAST RECOVERY RECTIFIERS - Pan Jit International