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International Rectifier |
PD-95435
IRL3103D2PbF
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l Copackaged HEXFET® Power MOSFET
and Schottky Diode
l Generation 5 Technology
l Logic Level Gate Drive
l Minimize Circuit Inductance
l Ideal For Synchronous Regulator Application
l Lead-Free
G
D
VDSS = 30V
RDS(on) = 0.014Ω
ID = 54A
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
S
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
54
34
220
2.0
70
0.56
± 16
-55 to + 150
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W
W/°C
V
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
1.8
62
Units
°C/W
06/22/04
IRL3103D2PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Ciss Input Capacitance
Min. Typ. Max. Units
Conditions
30 V VGS = 0V, ID = 250µA
0.037 V/°C Reference to 25°C, ID = 1mA
0.014
VGS = 10V, ID = 32A
0.019 Ω VGS = 4.5V, ID = 27A
1.0 V VDS = VGS, ID = 250µA
23 S VDS = 25V, ID = 34A
0.25 mA VDS = 30V, VGS = 0V
35
VDS = 24V, VGS = 0V, TJ = 125°C
100 nA VGS = 16V
-100
VGS = -16V
44
ID = 32A
14
24
nC VDS = 24V
VGS = 4.5V, See Fig. 6
9.0
210
20
54
VDD = 15V
ns ID = 34A
RG = 3.4Ω, VGS =4.5V
RD = 0.43 Ω,
Between lead,
4.5 nH 6mm (0.25in.)
7.5
from package
G
and center of die contact
D
S
2300
1100
310
VGS = 0V
pF
VDS = 25V
= 1.0MHz, See Fig. 5
3500
VGS = 0V, VDS = 0V
Body Diode & Schottky Diode Ratings and Characteristics
IF (AV)
ISM
VSD1
VSD2
trr
Qrr
ton
Parameter
( Schottky)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
5.0
A showing the
220
integral reverse
G
p-n junction and Schottky diode. S
1.3
0.6
V TJ = 25°C, IS = 32A, VGS = 0V
V TJ = 25°C, IS = 3.0A, VGS = 0V
51 77 ns TJ = 25°C, IF = 32A
47 71 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL3103 data and test conditions
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