파트넘버.co.kr 1S1888 데이터시트 PDF


1S1888 반도체 회로 부품 판매점

Silicon Diffused Type Rectifier



Toshiba Semiconductor 로고
Toshiba Semiconductor
1S1888 데이터시트, 핀배열, 회로
1S1830,1S1885,1S1887,1S1888
TOSHIBA Rectifier Silicon Diffused Type
1S1830,1S1885,1S1887,1S1888
General Purpose Rectifier Applications
Unit: mm
· Average Forward Current: IF (AV) = 1.0 A (Ta = 65°C)
· Repetitive Peak Reverse Voltage: VRRM = 100 V, 400 V, 600 V, 1000 V
Maximum Ratings (Ta = 25°C)
Characteristics
1S1885
Repetitive peak
reverse voltage
1S1887
1S1888
1S1830
Average forward current (Ta = 65°C)
Peak one cycle
surge forward
current
(non repetitive)
1S1830
1S1885
1S1887
1S1888
Junction temperature
Storage temperature range
Symbol
VRRM
IF (AV)
IFSM
Tj
Tstg
Rating
100
400
600
1000
1.0
45 (50 Hz)
49 (60 Hz)
60 (50 Hz)
66 (60 Hz)
-40 to 150
-40 to 150
Electrical Characteristics (Ta = 25°C)
Unit
V
A
A
°C
°C
JEDEC
DO-15
JEITA
SC-39
TOSHIBA
3-3B1A
Weight: 0.42 g (typ.)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Thermal resistance (junction to ambient)
Symbol
VFM
IRRM (1)
IRRM (2)
Rth (j-a)
Test Condition
IFM = 1.5 A
VRRM = Rated
VRRM = Rated, Tj = 150°C
DC
Min Typ. Max Unit
¾ ¾ 1.2 V
¾ ¾ 10
mA
¾ ¾ 400
¾ ¾ 100 °C/W
Marking
Type Code Lot No.
88 Month (starting from alphabet A)
Cathode Mark
Color: Silver
Year (last number of the christian era)
Code
30
85
87
88
Type
1S1830
1S1885
1S1887
1S1888
1 2001-11-14


1S1888 데이터시트, 핀배열, 회로
20
10
5.0
3.0
150
1.0
0.5
0.3
iF – vF
Tj = 25°C
0.1
0.4
0.8 1.2 1.6 2.0 2.4
Instantaneous forward voltage vF (V)
2.8
5000
1000
rth (j-a) – t
100
10
1
0.1
0.001
0.01
0.1 1 10
Time t (s)
100 1000
1S1830,1S1885,1S1887,1S1888
Ta max – IF (AV)
200
160
120 Resistive or inductive load
80 Capacitive load
40
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Average forward current IF (AV) (A)
Surge forward current (non-repetitive)
100
Tj = 25°C
80
60 1S1885~
1S1888
40
60
20 1S1830
50 Hz
0
1
35
10
30 50
100
Number of cycles
2 2001-11-14




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( toshiba )

1S1888 rectifier

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