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Galaxy Microelectronics |
Production specification
Schottky Barrier Rectifiers
MBRF2020---MBRF20100
FEATURES
z High surge capacity.
z For use in low voltage,high frequency
Pb
Lead-free
Inverters,free wheeling,and polarity protect-
tion applications.
z Metal silicon junction,majority carrier conduction.
z High current capacity,lowforward voltage drop.
z Guard ring for over voltage protection.
ITO-220AC
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
2020 2030 2040 2045 2050 2060 2080 20100
Recurrent Peak Reverse
VRRM
Voltage
20 30 40 45 50 60 80 100
Unit
V
VRMS RMS Voltage
14 21 28 32 35 42 56 70 V
VDC DC Blocking Voltage
20 30 40 45 50 60 80 100 V
IF(AV)
IFSM
RθJC
Tj Tstg
Average Forward Total
Device Rectified Current
@TA= 100°C
Peak Forward Surge
Current 8.3ms Single
Half Sine-wave
Superimposed on rated
load
Thermal Resistance
(Note1)
Operating Junction and
StorageTemperature
Range
20
150
2
-55 to +150
A
A
℃/
W
℃
Note:1.Thermal resistance from junction to case.
R041
Rev.A
www.gmicroelec.com
1
Production specification
Schottky Barrier Rectifiers
MBRF2020---MBRF20100
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MBRF2020-
MBRF2045
MBRF2050- MBRF2080-
MBRF2060 MBRF20100
MAX
Reverse Current IR
VR=VRRM,TA=25℃
VR=VRRM,TA=125℃
Forward Voltage
VF
(Note1)
IF=20A ,TA=25℃
IF=20A ,TA=125℃
Note:1.Pulse test:300µs pulse width,1% duty cycle.
0.70
0.57
0.5
50
0.80
0.70
0.85
0.70
UNIT
mA
V
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
R041
Rev.A
www.gmicroelec.com
2
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