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Dynex Semiconductor |
Replaces March 1998 version, DS4084-2.3
APPLICATIONS
s Rectification
s Freewheel Diode
s DC Motor Control
s Power Supplies
s Welding
s Battery Chargers
FEATURES
s High Surge Capability
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
SV10 25 M or K(R)
SV10 20 M or K(R)
SV10 16 M or K(R)
2500
2000
1600
Conditions
V = V + 100V
RSM
RRM
SV10
SV10
Rectifier Diode
DS4084-3.0 January 2000
KEY PARAMETERS
VRRM
IF(AV)
IFSM
2500V
180A
2200A
Lower voltage grades available.
M for M12 thread. K for 1/2" - 20UNF thread, R for reverse
polarity.
Add C to type number for DO8C package.
CURRENT RATINGS
Outline type codes: DO8C and DO8.
See Package Details for further information.
Symbol
Parameter
Single Side Cooled
IF(AV)
IF(RMS)
IF
Mean forward current
RMS value
Continuous (direct) forward current
Conditions
Half wave resistive load, Tcase = 100oC
Tcase = 100oC
Tcase = 100oC
Max. Units
180 A
283 A
233 A
1/7
SV10
SURGE RATINGS
Symbol
Parameter
I Surge (non-repetitive) forward current
FSM
I2t I2t for fusing
I Surge (non-repetitive) forward current
FSM
I2t I2t for fusing
Conditions
10ms half sine; T = 175oC
case
VR = 50% VRRM - 1/4 sine
10ms half sine; Tcase =175oC
VR = 0
Max. Units
1.76 kA
14.9 x 103 A2s
2.2 kA
24.0 x 103 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Rth(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
T Virtual junction temperature
vj
Tstg Storage temperature range
- Mounting Torque
Conditions
dc
Mounting torque 15.0Nm
with mounting compound
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.23 oC/W
- 0.08 oC/W
- 175
- 175
-55 200
12.0 15.0
oC
oC
oC
Nm
CHARACTERISTICS
Symbol
Parameter
V Forward voltage
FM
IRRM Peak reverse current
QS Total stored charge
IRM Peak recovery current
trr reverse recovery time
V Threshold voltage
TO
r Slope resistance
T
*Typical values.
Conditions
At 300A peak, T = 25oC
case
At VRRM, Tcase = 175oC
I
F
=
100A,
dI /dt
RR
=
20A/µs,
T
case
=
25˚C
At T = 175˚C
vj
At T = 175˚C
vj
Typ. Max. Units
- 1.5 V
-
300*
20
-
mA
µC
100* -
A
6.5* -
µs
- 1.1 V
- 1.3 mΩ
2/7
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