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IXYS |
Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO110-14NO7
B- C~ D~ E~ A+
VUO110-14NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1400 V
125 A
1200 A
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: PWS-E
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410b
Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 1400 V
VR = 1400 V
forward voltage drop
IF = 50 A
IF = 150 A
IF = 50 A
IF = 150 A
bridge output current
TC = 110°C
rectangular
d=⅓
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
VUO110-14NO7
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
Ratings
min. typ. max.
1500
1400
100
2
1.13
1.46
1.04
1.47
125
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.79 V
4.5 mΩ
0.7 K/W
0.3 K/W
175 W
1.20 kA
1.30 kA
1.02 kA
1.10 kA
7.20 kA²s
6.98 kA²s
5.20 kA²s
5.04 kA²s
37 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410b
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