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PDF VUO22-08NO1 Data sheet ( Hoja de datos )
| Número de pieza | VUO22-08NO1 | |
| Descripción | Standard Rectifier Module | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO22-08NO1
4/5
6 8 10
1/2
VUO22-08NO1
3~
Rectifier
VRRM =
I DAV =
I FSM =
800 V
30 A
150 A
Features / Advantages:
● Package with DCB ceramic
● Reduced weight
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: V1-A-Pack
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
1 page  
VUO22-08NO1
Rectifier
30 130 120
50 Hz
0.8 x V RRM
VR = 0 V
120 100
20
IF
[A]
10
TVJ =
125°C
150°C
0
0.4 0.8
TVJ = 25°C
1.2 1.6
VF [V]
2.0
Fig. 1 Forward current vs.
voltage drop per diode
110
100
IFSM
90
[A]
80
TVJ = 45°C
TVJ = 150°C
70
60
10-3
10-2
10-1
t [s]
100
Fig. 2 Surge overload current
vs. time per diode
80
I2t
60
[A2s]
40
TVJ = 45°C
TVJ = 150°C
20
0
1 10
t [ms]
Fig. 3 I2t vs. time per diode
16
12
Ptot
8
[W]
DC =
1
0.5
0.4
0.33
0.17
0.08
4
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
0
0 2 4 6 8 10 12 0
IF(AV)M [A]
25 50 75 100 125 150 175
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
36
32
28
24
IF(AV)M 20
[A] 16
12
DC =
1
0.5
0.4
0.33
0.17
0.08
8
4
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
3.0
2.5
2.0
ZthJC
1.5
[K/W]
1.0
0.5
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 1.300
2 0.300
3 0.350
4 0.550
ti (s)
0.1015
0.1026
0.4919
0.6200
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VUO22-08NO1.PDF ] | |
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