파트넘버.co.kr VUO16-08NO1 데이터시트 PDF


VUO16-08NO1 반도체 회로 부품 판매점

Three Phase Rectifier Bridge



IXYS Corporation 로고
IXYS Corporation
VUO16-08NO1 데이터시트, 핀배열, 회로
Three Phase
Rectifier Bridge
VUO 16
IdAVM = 20 A
VRRM = 800-1800 V
VRSM
V
900
1300
1500
1700
1900
VRRM
V
800
1200
1400
1600
1800
Type
VUO 16-08NO1
VUO 16-12NO1
VUO 16-14NO1
VUO 16-16NO1
VUO 16-18NO1
10
8
6
1/2 4 5
12
10
4/5 8
6
Symbol
IdAV
IdAV
IdAVM
I
FSM
I2t
TVJ
T
VJM
Tstg
VISOL
Md
Weight
Symbol
IR
VF
V
T0
rT
RthJH
dS
dA
a
Test Conditions
TK = 90°C, module
TA = 45°C (RthKA = 0.5 K/W), module
module
T
VJ
=
45°C;
VR = 0
T =T
VJ VJM
VR = 0
TVJ = 45°C
VR = 0
TVJ = TVJM
V =0
R
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50/60 Hz, RMS t = 1 min
IISOL 1 mA
t=1s
Mounting torque (M5)
(10-32UNF)
typ.
Test Conditions
VR = VRRM
VR = VRRM
TVJ = 25°C
TVJ = TVJM
IF = 7 A;
TVJ = 25°C
For power-loss calculations only
per diode,
per module,
120° rect.
120° rect.
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
Maximum Ratings
15 A
20 A
20 A
100 A
106 A
85 A
90 A
50 A2s
47 A2s
36 A2s
33 A2s
-40...+130
130
-40...+125
°C
°C
°C
3000
3600
V~
V~
2 - 2.5
18-22
35
Nm
lb.in.
g
Characteristic Values
0.3 mA
5 mA
1.15 V
0.8 V
50 m
4.5 K/W
0.75 K/W
12.7 mm
9.4 mm
50 m/s2
Features
l Package with DCB ceramic base plate
l Isolation voltage 3600 V~
l Planar passivated chips
l Blocking voltage up to 1800 V
l Low forward voltage drop
l Leads suitable for PC board soldering
l UL registered E72873
Applications
l Supplies for DC power equipment
l Input rectifiers for PWM inverter
l Battery DC power supplies
l Field supply for DC motors
Advantages
l Easy to mount with two screws
l Space and weight savings
l Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
F5 - 4
© 2000 IXYS All rights reserved


VUO16-08NO1 데이터시트, 핀배열, 회로
VUO 16
30
A
IF
25
20
TVJ = 25°C
TVJ = 130°C
15
10
5
max.
typ.
100
IFSM A
80
60
40
20
50 Hz
0.8 x VRRM
T = 45°C
VJ
100
A2s
I2dt
TVJ = 45°C
TVJ = 130°C
TVJ = 130°C
0
0.0 0.5 1.0 1.5 2.0 V 2.5
VF
Fig. 1 Forward current versus voltage
drop per diode
80
Ptot W
70
60
50
40
30
0 10
10-3
10-2
10-1 s
100
1
t
ms 10
t
Fig. 2 Surge overload current per diode
I : Crest value. t:duration
FSM
RthKA K/W
0.5
1
1.5
2
3
4
6
Fig. 3 I2t versus time (1-10 ms)
per diode
25
IdAVM A
20
15
10
20
5
10
0
0 5 10 15 20 25 A 0
IdAVM
25 50 75 100 125 °C 150
TA
Fig. 4 Power dissipation versus direct output current and ambient temperature
5
ZthJK
K/W
4
ZthJK
0
0 25 50 75 100 125 °C 150
TK
Fig. 5 Maximum forward current at
heatsink temperature TK
3
2
1
0
10-3
10-2
10-1
100
101 s
t
Fig. 6 Transient thermal impedance junction to heatsink per diode
102
Constants for ZthJK calculation:
i
Rth (K/W)
ti (s)
1 0.015
2 0.1
3 1.835
4 2.55
0.008
0.02
0.05
0.4
© 2000 IXYS All rights reserved
F5 - 5




PDF 파일 내의 페이지 : 총 2 페이지

제조업체: IXYS Corporation

( ixys )

VUO16-08NO1 rectifier

데이터시트 다운로드
:

[ VUO16-08NO1.PDF ]

[ VUO16-08NO1 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


VUO16-08NO1

Three Phase Rectifier Bridge - IXYS Corporation



VUO16-08NO1

Diode ( Rectifier ) - American Microsemiconductor