DNA30E2200FE 반도체 회로 부품 판매점
High Voltage Standard Rectifier
|
|
 IXYS |
High Voltage Standard Rectifier
Single Diode
Part number
DNA30E2200FE
51
DNA30E2200FE
VRRM
I FAV
VF
=
=
=
2200 V
30 A
1.22 V
Backside: isolated
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Applications:
● Diode for main rectification
● For single and three phase
bridge configurations
Package: i4-Pac
● Isolation Voltage: 3000 V~
● Industry convenient outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123c
Rectifier
Symbol
VRSM
VRRM
IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 2200 V
VR = 2200 V
forward voltage drop
IF = 30 A
IF = 60 A
IF = 30 A
IF = 60 A
average forward current
TC = 110°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 700 V; f = 1 MHz
DNA30E2200FE
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150 °C
TVJ = 175°C
Ratings
min. typ. max.
2300
2200
40
1.5
1.25
1.50
1.22
1.59
30
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 175°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.20
7
0.83 V
12.8 mΩ
1.35 K/W
K/W
110 W
370 A
400 A
315 A
340 A
685 A²s
665 A²s
495 A²s
480 A²s
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123c
|
PDF 파일 내의 페이지 : 총 5 페이지
제조업체: IXYS
( ixys )
DNA30E2200FE rectifier
데이터시트 다운로드 :
[ DNA30E2200FE.PDF ]
[ DNA30E2200FE 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
