파트넘버.co.kr S50D35 데이터시트 PDF


S50D35 반도체 회로 부품 판매점

SCHOTTKY BARRIER RECTIFIERS



Mospec Semiconductor 로고
Mospec Semiconductor
S50D35 데이터시트, 핀배열, 회로
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
125 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
ESD: 8KV(Min.) Human-Body Model
In compliance with EU RoHs 2002/95/EC directives
S50D30 Thru S50D60
SCHOTTKY BARRIER
RECTIFIERS
50 AMPERES
30-60 VOLTS
TO-3P
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Per diodes
Total Device (Rated VR),TC=100
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
S50D
Symbol
30 35 40 45 50 60
Unit
VRRM
VRWM 30 35 40 45 50 60
VR
V
VR(RMS) 21 25 28 32 35 42
V
IF(AV)
IFM
25
50
50
A
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
IFSM
400
A
Operating and Storage Junction
Temperature Range
TJ , TSTG
-65 to +125
THERMAL RESISTANCES
Typical Thermal Resistance junction to
case
Rθ j-c
1.7
/w
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol
Maximum Instantaneous Forward Voltage
( IF =25 Amp TC = 25 )
( IF =25 Amp TC = 100 )
VF
30
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25 )
( Rated DC Voltage, TC = 100 )
IR
S50D
35 40 45
0.60
0.49
3.0
60
50 60
0.70
0.60
Unit
V
mA
DIM MILLIMETERS
MIN MAX
A 20.63 22.38
B 15.38 16.20
C 1.90 2.70
D 5.10 6.10
E 14.81 15.22
F 11.72 12.84
G 4.20 4.50
H 1.82 2.46
I 2.92 3.23
J 0.89 1.53
K 5.26 5.66
L 18.50 21.50
M 4.68 5.36
N 2.40 2.80
O 3.25 3.65
P 0.55 0.70
Common Cathod
Suffix " C "
Common Anode
Suffix " A "
Double
Suffix " D "


S50D35 데이터시트, 핀배열, 회로
S50D30 Thru S50D60
FIG-1 FORWARD CURRENT DERATING CURVE
FIG-2 TYPICAL FORWARD CHARACTERISITICS
S50D40-S50D45
S50D50-S50D60
CASE TEMPERATURE ( )
FIG-3 TYPICAL REVERSE CHARACTERISTICS
TJ=75oC
TJ=25oC
PERCENT OF RATED REVERSE VOLTAGE ( )
FIG-5 PEAK FORWARD SURGE CURRENT
FORWARD VOLTAGE (Volts)
FIG-4 TYPICAL JUNCTION CAPACITANCE
S50D40-S50D45
S50D50-S50D60
REVERSE VOLTAGE (Volts)
NUMBER OF CYCLES AT 60 Hz




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S50D35 rectifier

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