파트넘버.co.kr GUO40-16N01 데이터시트 PDF


GUO40-16N01 반도체 회로 부품 판매점

Three Phase Rectifier Bridge



IXYS 로고
IXYS
GUO40-16N01 데이터시트, 핀배열, 회로
Advanced Technical Information
GUO 40
Three Phase Rectifier Bridge
IDAVM =
40 A
VRRM = 800-1600 V
VRSM
V
900
1300
1700
VRRM
V
800
1200
1600
Standard Types
GUO 40-08NO1
GUO 40-12NO1
GUO 40-16NO1
Ordering
No.
tbd
504430
504437
IGBTs
Symbol
IDAVM 
IDAVM ‚
IFSM
I2t
Ptot
TVJ
TOP
Tstg
VISOL
Md
Weight
Conditions
TC = 85°C, sine 120°
TA = 25°C, sine 120°
TVJ = 45°C; t = 10 ms (50 Hz), sine
VR = 0;
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
VR = 0;
t = 8.3 ms (60 Hz), sine
TVJ = 45°C; t = 10 ms (50 Hz), sine
VR = 0;
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
VR = 0;
t = 8.3 ms (60 Hz), sine
RMS; 1 s
mounting torque (M4)
typ.
+
~
~
-
~~
~
-~
+
Maximum Ratings
40 A
6A
370 A
390 A
320 A
340 A
680 A2s
640 A2s
510 A2s
470 A2s
35 W
-40 ... 175
150
-40 ... 150
°C
°C
°C
2500
V
0.8-1.2 Nm
9g
Features
• Low forward voltage drop
• Planar passivated chips
• Epoxy meets UL 94V-0
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with one screw
• Space and weight savings
Dimensions in mm (1 mm = 0.0394“)
Symbol Conditions
Characteristic Values
min. max.
IR
VF
VT0
rt
RthJC
VR = VRRM; TVJ = 25°C
VR = VRRM; TVJ = 150°C
IF = 12.5 A; TVJ = 25°C
for power-loss calculations only
TVJ = 150°C
per diode, DC current
per module
0.05 mA
1.5 mA
1.1 V
0.86 V
12.9 mW
4.3 K/W
0.7 K/W
RthJA
per diode, DC current
per module
50 K/W
8.3 K/W
dS1, dA1
creeping/Striking distance leads to heatsink
creeping/Striking distance lead to lead
9.5
5.5
mm
mm
a max. allowable acceleration
50 m/s2
Data according to IEC 60747 and refer to a single rectifier unless otherwise stated
IDAVM = bridge output current for resistive load  mounted on heatsink; ­ ‚ without heatsink
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
Size / mm
A
A2
A3
A4
A5
A6
b
b2
C
D
E
e
F
L
L1
O
ØP
Q
R (radius)
s1
s2
t1
t2
x1
x2
y1
y2
z1
min typ max
5.50
4.00
1.00
1.00
1.70
1.30
1.00
2.00
0.50
25.00
35.00
7.50
2.50
20.24
3.74
17.50
4.00
9.50
1.77
3.50
1.50
1.00
1.00
3.59
2.01
1.71
4.73
2.73
20080521
-2


GUO40-16N01 데이터시트, 핀배열, 회로
Advanced Technical Information
GUO 40
50
A
40
IF
30
20
10
0
0.0
140
A
120 TVJ = 25°C
IFSM 100
80
60
f = 50 Hz
VR = 0.8VRRM
TVJ=125°C
TVJ= 25°C
0.5 1.0 1.5 V 2.0
VF
40
TVJ = 125°C
20
0
0.001
0.01 0.1 s 1
t
1000
VR = 0 V
A2s
TVJ = 45°C
I2t TVJ = 125°C
100
1
t ms 10
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
120
110
100
W90
Ptot
80
70
RthHA
[K/W]
0.4
1
2
5
10
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40A 0
Id(AV)M
30 60 90 120 150 C 180
TA
Fig. 4 Power dissipation versus direct output current
and ambient temperature, sine 180°
5
K/W
4
ZthJC
3
2
Fig. 3 I2t versus time per diode
50
A
40
Id(AV)M
30
20
10
0
0 40 80 120 160 C
TH
Fig. 5 Max. forward current
vs. case temperature
Constants for ZthJC calculation:
i Rthi (K/W)
1 0.302
2 1.252
3 1.582
4 1.164
ti (s)
0.002
0.032
0.227
0.82
1
0
0.001
0.01
0.1
1
Fig. 6 Transient thermal impedance junction to case
t
10 s
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080521
-2




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GUO40-16N01 rectifier

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Three Phase Rectifier Bridge - IXYS