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Silan Microelectronics |
SFR08S60T2/F2/D_Datasheet
8A, 600V SUPER-FAST RECOVERY RECTIFIER
GENERAL DESCRIPTION
SFR08S60T2/F2/D is a Super-Fast Recovery Diode, fabricated in
advanced silicon planar epitaxial technology. The process
parameter and the device structure are fine tuned with optimized
performance of forward voltage drop and reverse recovery time.
Accuracy epitaxial dope control, advanced planar junction terminal
structure and the platinum doped life control, guarantee the best
overall performance, ruggedness and reliability characteristics.
SFR08S60T2/F2 is intended for use in the output rectification stage
of SMPS, UPS, DC-DC converters as well as free-wheeling diode
in low voltage inverters and chopper motor drivers.
FEATURES
∗ Ultrafast 35 Nanosecond Recovery Time
∗ Low Forward Voltage Drop
∗ Low Leakage Current
∗ 150°C Operating Junction Temperature
NOMENCLATURE
ORDERING INFORMATION
Part No.
SFR08S60T2
SFR08S60F2
SFR08S60D
SFR08S60DTR
Package Type
TO-220-2L
TO-220F-2L
TO-252-2L
TO-252-2L
Marking
SFR08S60T2
SFR08S60F2
SFR08S60D
SFR08S60D
Material
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.4
2011.06.08
Page 1 of 6
SFR08S60T2/F2/D_Datasheet
ABSOLUTE MAXIMUM RATINGS
characteristics
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Forward Surge Current
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VRRM
IF(AV)
IFSM
TJ
Tstg
THERMAL CHARACTERISTICS
characteristics
Thermal Resistance, Junction-to-Case
Symbol
RθJC
ELECTRICAL CHARACTERISTICS
characteristics
Maximum Forward Voltage
IF=8.0 Amps, TC=25°C
Maximum Instantaneous Reverse Current
Rated dc Voltage, TC=25°C
Maximum Reverse Recovery Time
IF=0.5 Amp, IR=1.0Amp, IREC=0.25Amp
Symbol
VF
IR
trr
Min.
--
--
--
Ratings
700
8.0
120
-50~+150
-50~+150
Ratings
2.0
Typ.
1.95
--
--
Max.
2.2
10.0
35
Unit
V
A
A
°C
°C
Unit
°C/W
Unit
V
µA
ns
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.4
2011.06.08
Page 2 of 6
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