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American First Semiconductor |
Chip Silicon Rectifier
1.0A Glass Passivated Sufrace Mount
Efficient Fast Rectifiers - 50-600V
Features
• Low profile surface mounted application in order to
optimize board space.
• Trr less than 25ns for high efficiency
• High current & surge capability.
• Low forward dropdown voltage
• Glass passivated chip junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen free parts, ex. EF101PG-H.
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, DO-41
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guaranteed
• Polarity: Color band denotes cathode end
• Mounting Position : Any
• Weight : Approximated 0.33 gram
EF101PG THRU EF105PG
Package outline
DO-41
.107(2.7)
.080(2.0)
DIA.
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
Ambient temperature = 55OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 1.0 A
IFSM 30 A
5.0
IR
µA
100
CJ 15 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
EF101PG
50
35
50
EF102PG 100 70 100 0.875
EF103PG 200 140 200
25
EF104PG 400 280 400 1.25
EF105PG 600 420 600 1.75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
*5 Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
Page 1/2
EF101PG THRU EF105PG
Rating and characteristic curves
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
10
EF101PG - EF103PG
1
EF104PG
TJ=25OC
0.1
EF105PG
0.01
0.4 0.6 0.8 1.0
pulse width =300µS
1% duty cycle
1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GENERATOR
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
trr
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-1.0A
1cm
SET TIME BASE FOR
10 / 20ns / cm
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
25 50 75 100 125 150
AMBIENT TEMPERATURE ( C)
175
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
25
20
TJ=25 C
8.3ms Single Half
15 Sine Wave
JEDEC method
10
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
40
30
25
20
15
10
5
0
.01
.05 .1
.5 1
5
REVERSE VOLTAGE,(V)
10
50 100
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