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ON Semiconductor |
MCR100 Series
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
Features
• Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
• Blocking Voltage to 600 V
• On−State Current Rating of 0.8 A RMS at 80°C
• High Surge Current Capability − 10 A
• Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
• Immunity to dV/dt − 20 V/msec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Pb−Free Packages are Available*
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SCRs
0.8 A RMS
100 thru 600 V
G
AK
TO−92
CASE 29
STYLE 10
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MCR
100−x
AYWWG
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 10
1
x = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1 Cathode
2 Gate
3 Anode
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Publication Order Number:
MCR100/D
Free Datasheet http://www.Datasheet4U.com
MCR100 Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Notes 1 and 2)
(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; RGK = 1 kW)
MCR100−3
MCR100−4
MCR100−6
MCR100−8
VDRM,
VRRM
100
200
400
600
V
On-State RMS Current, (TC = 80°C) 180° Conduction Angles
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C)
Circuit Fusing Consideration, (t = 8.3 ms)
IT(RMS)
ITSM
I2t
0.8
10
0.415
A
A
A2s
Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0 ms)
PGM
0.1
W
Forward Average Gate Power, (TA = 25°C, t = 8.3 ms)
PG(AV)
0.01
W
Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0 ms)
IGM 1.0
A
Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0 ms)
VGRM
5.0
V
Operating Junction Temperature Range @ Rate VRRM and VDRM
TJ −40 to 110 °C
Storage Temperature Range
Tstg −40 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. See ordering information for exact device number options.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,Junction−to−Case
Junction−to−Ambient
RqJC 75 °C/W
RqJA
200
Lead Solder Temperature
(t1/16″ from case, 10 secs max)
TL 260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VD = Rated VDRM and VRRM; RGK = 1 kW)
TC = 25°C
TC = 110°C
ON CHARACTERISTICS
Peak Forward On−State Voltage*
(ITM = 1.0 A Peak @ TA = 25°C)
Gate Trigger Current (Note 4)
(VAK = 7.0 Vdc, RL = 100 W)
TC = 25°C
Holding Current (Note 3)
TC = 25°C
(VAK = 7.0 Vdc, Initiating Current = 20 mA, RGK = 1 kW) TC = −40°C
Latch Current (Note 4)
(VAK = 7.0 V, Ig = 200 mA)
TC = 25°C
TC = −40°C
Gate Trigger Voltage (Note 4)
(VAK = 7.0 Vdc, RL = 100 W)
TC = 25°C
TC = −40°C
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 1 kW,TJ = 110°C)
Critical Rate of Rise of On−State Current
(IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
3. RGK = 1000 W included in measurement.
4. Does not include RGK in measurement.
IDRM, IRRM
VTM
IGT
IH
IL
VGT
dV/dt
di/dt
mA
− − 10
− − 100
− − 1.7 V
− 40 200 mA
− 0.5 5.0 mA
− − 10
− 0.6 10 mA
− − 15
− 0.62 0.8
− − 1.2
V
20 35
− V/ms
− − 50 A/ms
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2
Free Datasheet http://www.Datasheet4U.com
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