파트넘버.co.kr MURF1610CT 데이터시트 PDF


MURF1610CT 반도체 회로 부품 판매점

(MURF1605CT - MURF1660CT) SUPER FAST RECOVERY SILICON RECTIFIER



KD 로고
KD
MURF1610CT 데이터시트, 핀배열, 회로
MURF1605CT THRU MURF1660CT
SUPER FAST RECOVERY SILICON RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 16.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Super fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.25(6.35mm) from case
MECHANICAL DATA
Case: JEDEC ITO-220AB molded plastic body
Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250oC/10 seconds, 0.25" (6.35mm) from case
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
ITO-220AB
.406(10.3)
.386(9.8)
.138(3.5)
.122(3.1)
.118(3.0)
.102(2.6)
.189(4.8)
.173(4.4)
.118(3.0)
.106(2.7)
.157(4.0)
.142(3.6)
.610(15.5)
.571(14.5)
.059(1.5)
.043(1.1)
.030(0.76)
.020(0.51)
.112(2.84)
.088(2.24)
.071(1.8)
.055(1.4)
.571(14.5)
.531(13.5)
.114(2.9)
.098(2.5)
.030(0.76)
.020(0.51)
Dimensions in inches and (millimeters)
PIN 1 -
PIN 3 -
+
PIN 2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TC = 105°C
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
Forward Voltage
@IF = 8.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 125°C
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
Symbol
MURF
1605CT
MURF
1610CT
MURF
1615CT
MURF
1620CT
MURF
1630CT
MURF
1640CT
MURF
1660CT
Unit
VRRM
VRWM 50 100 150 200 300 400 600 V
VR
VR(RMS)
35
70 105 140 210 280 420 V
IO 16 A
IFSM
VFM
IRM
trr
Cj
Tj, TSTG
0.95
35
80
125
10
500
-65 to +150
1.3
50
60
A
1.7 V
µA
nS
pF
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
Free Datasheet http://www.datasheet4u.com/


MURF1610CT 데이터시트, 핀배열, 회로
MURF1605CT THRU MURF1660CT
RATINGS AND CHARACTERISTIC CURVES
20
16
12
8
4
0
0 50 100 150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
225
8.3 ms single half-sine-wave
JEDEC method
150
75
100
10
1605 - 1620
1630 - 1640
1660
1.0
Pulse width = 300µs
2% duty cycle
0.1
0 0.6 1.2 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
400
Tj = 25°C
f = 1.0MHz
100
MURF1640CT-
MURF1660CT
MURF1605CT-
MURF1620CT
0
1
10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
50NI (Non-inductive)
10NI
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0
NI
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
10
0.1
+0.5A
1.0 10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
100
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
Free Datasheet http://www.datasheet4u.com/




PDF 파일 내의 페이지 : 총 2 페이지

제조업체: KD

( kd )

MURF1610CT rectifier

데이터시트 다운로드
:

[ MURF1610CT.PDF ]

[ MURF1610CT 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


MURF1610CT

(MURF1605 - MURF1660) 16.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier - Thinki Semiconductor



MURF1610CT

(MURF1605CT - MURF1660CT) SUPER FAST RECOVERY SILICON RECTIFIER - KD



MURF1610CT

Super Fast Rectifiers - Bruckewell