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MBR3045PT 반도체 회로 부품 판매점

Power Rectifier



ON Semiconductor 로고
ON Semiconductor
MBR3045PT 데이터시트, 핀배열, 회로
MBR3045PT
Preferred Device
SWITCHMODEt
Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
Dual Diode Construction; Terminals 1 and 3 may be Connected for
Parallel Operation at Full Rating
Guard−ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Pb−Free Package is Available*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM 45 V
VRWM
VR
Average Rectified Forward Current
IF(AV)
A
(Rated VR, TC = 105°C)
Per Device
30
Per Diode
15
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz) Per Diode
IFRM
30 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
200 A
Peak Repetitive Reverse Current (2.0 ms, IRRM 2.0 A
1.0 kHz) Per Diode (See Figure 6)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Peak Surge Junction Temperature
(Forward Current Applied)
Tstg
TJ
TJ(pk)
−65 to +175
−65 to +175
175
°C
°C
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000 V/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 45 VOLTS
12
34
MARKING
DIAGRAM
4
1
2
3
SOT−93
CASE 340D
PLASTIC
AYWWG
MBR3045PT
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MBR3045PT
SOT−93 30 Units / Rail
MBR3045PTG
SOT−93
(Pb−Free)
30 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBR3045PT/D
Free Datasheet http://www.datasheet4u.com/


MBR3045PT 데이터시트, 핀배열, 회로
MBR3045PT
THERMAL CHARACTERISTICS (Per Diode)
Rating
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2)
(iF = 20 Amps, TC = 125°C)
(iF = 30 Amps, TC = 125°C)
(iF = 30 Amps, TC = 25°C)
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
RqJC
RqJA
vF
iR
Max
1.4
40
0.60
0.72
0.76
100
1.0
Unit
°C/W
°C/W
V
mA
100
50
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0
TJ = 150°C
25°C
0.2 0.4 0.6 0.8 1.0 1.2
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.4
100
TJ = 150°C
10 125°C
100°C
1.0 75°C
0.1
25°C
0.01
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.com/




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MBR3045PT rectifier

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