D92-02 반도체 회로 부품 판매점
Ultrafast Recovery Rectifier
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 Thinki Semiconductor |
D92-02
®
Pb Free Plating Product
D92-02
Pb
Ultrafast Recovery Rectifier
Features
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
APPLICATIONS
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-3P/TO-247AD
0.640(16.25)
0.620(15.75)
0.142(3.60)
0.125(3.20)
Unit: inch (mm)
0.199(5.05)
0.175(4.45)
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
0.095(2.40)
0.030(0.75)
0.017(0.45)
Positive
D92-02
Negative
Doubler
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
VR
VRRM
Parameter
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
IFSM
PD
TJ
TSTG
Torque
RθJC
Weight
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
Thermal Resistance
Test Conditions
TC=110°C, Per Diode
TC=110°C, Per Package
TC=110°C, Per Diode
TJ=45°C, t=10ms, 50Hz, Sine
Recommended（M3）
Junction-to-Case
Values
220
220
10
20
14
100
83
-40 to +150
-40 to +150
1.1
1.5
6.0
Unit
V
V
A
A
A
A
W
°C
°C
N·m
°C /W
g
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
IRM Reverse Leakage Current
VF Forward Voltage
trr Reverse Recovery Time
trr Reverse Recovery Time
IRRM Max. Reverse Recovery Current
trr Reverse Recovery Time
IRRM Max. Reverse Recovery Current
Test Conditions
VR=220V
VR=220V, TJ=125°C
IF=10A
IF=10A, TJ=125°C
IF=1A, VR=30V, diF/dt=-200A/μs
VR=100V, IF=10A
diF/dt=-200A/μs, TJ=25°C
VR=100V, IF=10A
diF/dt=-200A/μs, TJ=125°C
Min.
--
--
--
--
--
--
--
--
--
Typ.
--
--
0.86
--
25
32
2.1
45
5
Max.
50
1
0.95
0.80
--
--
--
--
--
Unit
µA
mA
V
V
ns
ns
A
ns
A
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
D92-02
®
30
25
20
TJ =125°C
15
10
TJ =25°C
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VF（V）
Fig1. Forward Voltage Drop vs Forward Current
25
VR=100V
TJ =125°C
20
15 IF=20A
IF=10A
10 IF=5A
5
00 200 400 600 800 1000
diF/dt（A/μs）
Fig3. Reverse Recovery Current vs diF/dt
1.2
1
0.8
trr
0.6
IRRM
0.4
Qrr
0.2
00 25 50 75 100 125 150
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
© 2006 Thinki Semiconductor Co.,Ltd.
100
80
IF=20A
60
VR=100V
TJ =125°C
40
IF=10A
20 IF=5A
00 200 400 600 800 1000
diF/dt（A/μs）
Fig2. Reverse Recovery Time vs diF/dt
250
VR=100V
TJ =125°C
200
150
100
50
IF=20A
IF=10A
IF=5A
00 200 400 600 800 1000
diF/dt（A/μs）
Fig4. Reverse Recovery Charge vs diF/dt
10
1
10-1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-310-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Page 2/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
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D92-02 rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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