파트넘버.co.kr RBU1007M 데이터시트 PDF


RBU1007M 반도체 회로 부품 판매점

(RBU1001M - RBU1007M) SILICON BRIDGE RECTIFIER



Rectron Semiconductor 로고
Rectron Semiconductor
RBU1007M 데이터시트, 핀배열, 회로
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 10.0 Ampere
RBU1001M
THRU
RBU1007M
FEATURES
* Low leakage
* Low forward voltage
* Silver-plated copper leads
* Surge overload rating: 200 amperes peak
* Mounting position: Any
RBU
MECHANICAL DATA
* Epoxy: Device has UL flammability classification 94V-O
.880 (22.3)
.860 (21.8)
.160 (4.1)
.140 (3.5)
.512 (13.0)
.100 (2.54)
.085 (2.16)
.140 (3.56)
.130 (3.30)
.085 (2.16)
.075 (1.90)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.210 (5.33)
.190 (4.83)
.080 (2.03)
.065 (1.65)
.022 (0.56)
.018 (0.46)
http://www.DataSheet4U.net/
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (@ TA=25 OC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TC = *100 oC (Note 4)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
RBU1001M RBU1002M RBU1003M RBU1004M RBU1005M RBU1006M RBU1007M
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
UNITS
Volts
Volts
Volts
IO 10.0 Amps
IFSM
Rq JC
Rq JA
TJ, TSTG
200
2.3
26
-55 to + 150
Amps
0C/W
0C
ELECTRICAL CHARACTERISTICS(@TA=25 OC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 5.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TA = 25oC
@TA = 100oC
SYMBOL
VF
IR
RBU1001M RBU1002M RBU1003M RBU1004M RBU1005M RBU1006M RBU1007M
1.1
2.0
100
NOTES : 1. Thermal Resistance : Heat-sink case mounted or if PCB mounted.
2. "Fully ROHS compliant", "100% Sn plating (Pb-free)".
3. Equivalent to Vishay's GBU10 Series.
4. "*" Heat Sink Temperature.
UNITS
Volts
mAmps
2006-12
datasheet pdf - http://www.DataSheet4U.net/


RBU1007M 데이터시트, 핀배열, 회로
RATING AND CHARACTERISTICS CURVES ( RBU1001M THRU RBU1007M )
30
20
10
5 TC= 150OC (TYP)
2
1
0.5
TC= 25OC (TYP)
0.2 Pulse test
per one diode
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG.1 TYPICAL INSTANTANEOUS FORWARD
CHARACTERITICS
300
sine wave
0
8.3ms 8.3ms
200 1 cycle
non-repetitive
Tj=25
100
34
30
sine wave
TJ = 150 OC
20
10
00 2 4
6 8 10 12 14
AVERAGE RECTIFIED FORWARD CURRENT, (A)
FIG.2 POWER DISSIPATION
4
on glass-epoxi substrate
3
P.C.B
soldering land 5mmf
sine wave
2 R-load
free in air
1http://www.DataSheet4U.net/
0
0 12
5 10 20
50 100
NUMBER OF CYCLE
FIG.3 SURGE FORWARD CURRENT CAPABILITY
10
8
6
heatsink
Tc
Tc
4
2 sine wave
R-load
on heatsink
0
10 30 50 70 90 110 130 150 170
HEAT SINK TEMPERATURE, (OC)
FIG.5 TYPICAL FORWARD CURRENT
DERATING CURVE
0
0 40 80 120 160
AMBIENT TEMPERATURE, (OC)
FIG.4 TYPICAL FORWARD CURRENT
DERATING CURVE
2.4
2.0 with thermal compound
1.6
1.2
0.8
0.4
0
2 3 45 67 8
MOUNTING TORQUE (kg.cm)
FIG.6 CONTACT THERMAL RESISTANCE fcf
datasheet pdf - http://www.DataSheet4U.net/




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제조업체: Rectron Semiconductor

( rectron )

RBU1007M rectifier

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RBU1007M

(RBU1001M - RBU1007M) SILICON BRIDGE RECTIFIER - Rectron Semiconductor