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VT1045CBP 반도체 회로 부품 판매점

Trench MOS Barrier Schottky Rectifier



Vishay 로고
Vishay
VT1045CBP 데이터시트, 핀배열, 회로
New Product
VT1045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
VT1045CBP
3
2
1
PIN 1
PIN 2
PIN 3
CASE
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
45 V
IFSM
100 A
VF at IF = 5.0 A
0.41 V
TOP max.
150 °C
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As markedwww.DataSheet.co.kr
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV) (1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Operating junction and storage temperature range
Junction temperature in DC forward current
without reverse bias, t 1 h
TOP, TSTG
TJ (2)
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
VT1045CBP
45
10
5.0
100
- 40 to + 150
200
UNIT
V
A
A
°C
°C
Document Number: 89363 For technical questions within your region, please contact one of the following:
Revision: 26-Oct-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


VT1045CBP 데이터시트, 핀배열, 회로
VT1045CBP
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
IF = 2.5 A
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
Reverse current per diode
VR = 45 V
Notes
(3) Pulse test: 300 μs pulse width, 1 % duty cycle
(4) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.44
0.49
0.34
0.41
-
5
MAX.
-
0.58
-
0.50
500
15
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RθJC
VT1045CBP
3.5
2.5
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
VT1045CBP-M3/4W
1.87
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
PACKAGE CODE
4W
www.DataSheet.co.kr
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
12
10
8
6
4
2
0
100
110 120 130 140
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
4.0
D = 0.5 D = 0.8
3.5 D = 0.3
3.0
2.5 D = 0.2
2.0
D = 0.1
1.5
1.0
D = 1.0
T
0.5
0
0
D = tp/T
tp
12345
Average Forward Current (A)
6
Fig. 2 - Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89363
Revision: 26-Oct-10
Datasheet pdf - http://www.DataSheet4U.net/




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Trench MOS Barrier Schottky Rectifier - Vishay