파트넘버.co.kr VI40M120C 데이터시트 PDF


VI40M120C 반도체 회로 부품 판매점

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Vishay 로고
Vishay
VI40M120C 데이터시트, 핀배열, 회로
www.vishay.com
New Product
V40M120C, VI40M120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
V40M120C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VI40M120C
3
2
1
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
2 x 20 A
120 V
250 A
0.64 V
150 °C
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As markedwww.DataSheet.co.kr
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IFSM
dV/dt
TJ, TSTG
V40M120C
VI40M120C
120
40
20
250
10 000
- 40 to + 150
UNIT
V
A
V/μs
°C
Revision: 11-Jan-12
1 Document Number: 89465
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


VI40M120C 데이터시트, 핀배열, 회로
www.vishay.com
New Product
V40M120C, VI40M120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
Reverse current per diode
VR = 90 V
VR = 120 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 20 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.54
0.64
0.79
0.46
0.54
0.64
4
3
-
6
MAX.
-
-
0.89
-
-
0.72
-
-
500
32
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40M120C
VI40M120C
Typical thermal resistance per diode
RθJC
1.8
UNIT
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V40M120C-M3/4W
1.88
TO-262AA
VI40M120C-M3/4W
1.45
PACKAGE CODE
4W
www.DataSheet.co.kr
4W
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
50
Resistive or Inductive Load
40
30
20
10
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
18.0
16.0
D = 0.5 D = 0.8
D = 0.3
14.0 D = 0.2
12.0 D = 0.1
D = 1.0
10.0
8.0
T
6.0
4.0
2.0
D = tp/T
tp
0.0
0 2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 11-Jan-12
2 Document Number: 89465
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




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Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay