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VF40150C 반도체 회로 부품 판매점

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Vishay 로고
Vishay
VF40150C 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
V40150C, VF40150C, VB40150C & VI40150C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V40150C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
123
VF40150C
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TO-263AB
K
TO-262AA
K
2
1
VB40150C
PIN 1
K
PIN 2
HEATSINK
3
2
1
VI40150C
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
2 x 20 A
150 V
160 A
0.75 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V40150C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF40150C VB40150C
150
40
20
160
150
0.5
10 000
1500
- 55 to + 150
VI40150C
UNIT
V
A
A
mJ
A
V/µs
V
°C
Document Number: 89048
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


VF40150C 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
V40150C, VF40150C, VB40150C & VI40150C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR 150 (minimum)
Instantaneous forward voltage per diode (1)
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
TA = 25 °C
TA = 125 °C
VF
0.69
0.84
1.15
0.55
0.64
0.75
Reverse current per diode (2)
VR = 100 V
VR = 150 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
2
2.5
-
5
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40150C
VF40150C
Typical thermal resistance per diode
RθJC
1.8
4
VB40150C
1.8
MAX.
-
-
-
1.43
-
-
0.82
-
-
250
25
VI40150C
1.8
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V40150C-E3/4W
1.89
ITO-220AB
VF40150C-E3/4W
1.75
TO-263AB
VB40150C-E3/4W
1.39
TO-263AB
VB40150C-E3/8W
1.39
TO-262AA
VI40150C-E3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
50
Resistive or Inductive Load
40
V(B,I)40150C
30
VF40150C
20
10
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
Document Number: 89048
Revision: 24-Jun-09
Datasheet pdf - http://www.DataSheet4U.net/




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VF40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay Siliconix



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Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay