파트넘버.co.kr VB30120SG 데이터시트 PDF


VB30120SG 반도체 회로 부품 판매점

High-Voltage Trench MOS Barrier Schottky Rectifier



Vishay 로고
Vishay
VB30120SG 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
V30120SG, VF30120SG, VB30120SG, VI30120SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.47 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30120SG
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30120SG
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB30120SG
NC K
A HEATSINK
3
2
1
VI30120SG
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TJ max.
30 A
120 V
220 A
0.81 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30120SG
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current
at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF30120SG VB30120SG
120
30
220
175
0.5
10 000
1500
- 40 to + 150
VI30120SG
UNIT
V
A
A
mJ
A
V/µs
V
°C
Document Number: 89011 For technical questions within your region, please contact one of the following:
Revision: 14-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


VB30120SG 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
V30120SG, VF30120SG, VB30120SG, VI30120SG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR 120 (minimum)
Instantaneous forward voltage (1)
IF = 5 A
IF = 15 A
IF = 30 A
IF = 5 A
IF = 15 A
IF = 30 A
TA = 25 °C
TA = 125 °C
VF
0.54
0.80
1.16
0.47
0.66
0.81
Reverse current (2)
VR = 90 V
VR = 120 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
13
13
-
23
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
1.28
-
-
0.90
-
-
500
55
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120SG
VF30120SG VB30120SG
Typical thermal resistance
RθJC
1.6
4.0
1.6
VI30120SG
1.6
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V30120SG-E3/4W
1.88
ITO-220AB
VF30120SG-E3/4W
1.75
TO-263AB
VB30120SG-E3/4W
1.39
TO-263AB
VB30120SG-E3/8W
1.39
TO-262AA
VI30120SG-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
V(B,I)30120SG
25
20
VF30120SG
15
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100
Case Temperature (°C)
125
150
Figure 1. Forward Current Derating Curve
50
D = 0.5
45 D = 0.3
40 D = 0.2
35
30 D = 0.1
D = 0.8
D = 1.0
25
20
T
15
10
5
D = tp/T
tp
0
0 4 8 12 16 20 24 28 32 36
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89011
Revision: 14-Jul-10
Datasheet pdf - http://www.DataSheet4U.net/




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VB30120S

High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay



VB30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay