파트넘버.co.kr VB20150S 데이터시트 PDF


VB20150S 반도체 회로 부품 판매점

High-Voltage Trench MOS Barrier Schottky Rectifier



Vishay 로고
Vishay
VB20150S 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
V20150S, VF20150S, VB20150S & VI20150S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
V20150S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VF20150S
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB20150S
NC K
A HEATSINK
3
2
1
VI20150S
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
20 A
150 V
160 A
0.75 V
150 °C
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20150S
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
Operating junction and storage temperature range
TJ, TSTG
VF20150S VB20150S
150
20
160
1500
- 55 to + 150
VI20150S
UNIT
V
A
A
V
°C
Document Number: 89059 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


VB20150S 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
V20150S, VF20150S, VB20150S & VI20150S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR 150 (minimum)
Instantaneous forward voltage (1)
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
TA = 25 °C
TA = 125 °C
VF
0.69
0.84
1.15
0.55
0.64
0.75
Reverse current (2)
VR = 100 V
VR = 150 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
2
2.5
-
5
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
1.43
-
-
0.82
-
-
250
25
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20150S
VF20150S
Typical thermal resistance
RθJC
2.0
4.0
VB20150S
2.0
VI20150S
2.0
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20150S-E3/4W
1.88
ITO-220AB
VF20150S-E3/4W
1.75
TO-263AB
VB20150S-E3/4W
1.39
TO-263AB
VB20150S-E3/8W
1.39
TO-262AA
VI20150S-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
V(B,I)20150S
15 VF20150S
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89059
Revision: 19-May-08
Datasheet pdf - http://www.DataSheet4U.net/




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