파트넘버.co.kr V20120S 데이터시트 PDF


V20120S 반도체 회로 부품 판매점

High-Voltage Trench MOS Barrier Schottky Rectifier



Vishay 로고
Vishay
V20120S 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
V20120S, VF20120S, VB20120S & VI20120S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20120S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF20120S
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB20120S
NC K
A HEATSINK
VI20120S
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
20 A
120 V
200 A
0.73 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20120S
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
VAC
Operating junction ans storage temperature range
TJ, TSTG
VF20120S VB20120S
120
20
200
1500
- 40 to + 150
VI20120S
UNIT
V
A
A
V
°C
Document Number: 88993 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


V20120S 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
V20120S, VF20120S, VB20120S & VI20120S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C VBR 120 (minimum)
Instantaneous forward voltage (1)
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
TA = 25 °C
TA = 125 °C
VF
0.57
0.71
0.99
0.50
0.61
0.73
Reverse current (2)
VR = 90 V
VR = 120 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
10
6
-
14
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20120S
VF20120S
Typical thermal resistance
RθJC
2
4
VB20120S
2
MAX.
-
-
-
1.12
-
-
0.81
-
-
300
30
VI20120S
2
UNIT
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20120S-E3/4W
1.88
ITO-220AB
VF20120S-E3/4W
1.75
TO-263AB
VB20120S-E3/4W
1.38
TO-263AB
VB20120S-E3/8W
1.38
TO-262AA
VI20120S-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
15 VF20120S
V(B,I)20120S
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.5 D = 0.8
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
5 10 15 20
Average Forward Current (A)
25
Figure 2. Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88993
Revision: 19-May-08
Datasheet pdf - http://www.DataSheet4U.net/




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