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V80100P 반도체 회로 부품 판매점

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Vishay 로고
Vishay
V80100P 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
V80100P
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.425 V at IF = 10 A
TMBS®
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
• Low thermal resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 40 A
TJ max.
80 A
100 V
500 A
0.667 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IRRM
dV/dt
TJ, TSTG
V80100P
100
80
40
500
1.0
10 000
- 40 to + 150
UNIT
V
A
A
A
V/µs
°C
Document Number: 88979 For technical questions within your region, please contact one of the following:
Revision: 26-May-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


V80100P 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
V80100P
New Product
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TJ = 25 °C
VBR 100 (minimum)
Instantaneous forward voltage per diode (1)
IF = 10 A
IF = 20 A
IF = 40 A
IF = 10 A
IF = 20 A
IF = 40 A
TJ = 25 °C
TJ = 125 °C
VF
0.492
0.580
0.736
0.425
0.541
0.667
Reverse current per diode (2)
VR = 80 V
VR = 100 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IR
38
10
85
20
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
0.78
-
-
0.72
-
-
800
45
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RθJC
V80100P
1.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V80100P-E3/45
6.14
45
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
80
Resistive or Inductive Load
60
50
40
20
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
35
D = 0.8
30 D = 0.5
25 D = 0.3
20
D = 0.2
15
D = 0.1
10
D = 1.0
T
5
D = tp/T
tp
0
0 5 10 15 20 25 30 35 40 45
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88979
Revision: 26-May-08
Datasheet pdf - http://www.DataSheet4U.net/




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