V60200PGW 반도체 회로 부품 판매점
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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 Vishay |
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New Product
V60200PGW
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TMBS®
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TO-3PW
PIN 1
PIN 3
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
200 V
IFSM
300 A
EAS at L = 60 mH
150 mJ
VF at IF = 30 A
0.77 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified curret (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
EAS
IRRM
dV/dt
TJ, TSTG
V60200PGW
200
60
30
300
150
0.5
10 000
- 40 to + 150
UNIT
V
A
A
mJ
A
V/μs
°C
Document Number: 89184 For technical questions within your region, please contact one of the following:
Revision: 09-Feb-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
V60200PGW
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode
IR = 1.0 mA
IF = 10 A
IF = 15 A
IF = 30 A
IF = 10 A
IF = 15 A
IF = 30 A
TA = 25 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
200 (minimum)
0.69
0.90
1.28
0.54
0.66
0.77
Reverse current per diode
VR = 180 V
VR = 200 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR (2)
3.4
4.6
-
7.5
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RθJC
V60200PGW
1.5
0.8
MAX.
-
-
-
1.48
-
-
0.85
-
-
210
27
UNIT
V
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-3PW
V60200PGW-M3/4W
4.5
PACKAGE CODE
4W
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
70
Resistive or Inductive Load
60
50
40
30
20
10
0
0
Mounted on Specific Heatsink
25 50 75 100
Case Temperature (°C)
125
150
Fig. 1 - Forward Current Derating Curve
32
D = 0.8
28
D = 0.5
D = 0.3
24
20 D = 0.2
D = 1.0
16 D = 0.1
12
T
8
4 D = tp/T tp
0
0 4 8 12 16 20 24 28 32 36
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 89184
Revision: 09-Feb-10
Datasheet pdf - http://www.DataSheet4U.net/
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V60200PGW rectifier
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay