파트넘버.co.kr UB8BT 데이터시트 PDF


UB8BT 반도체 회로 부품 판매점

(UB8BT - UB8DT) Ultrafast Rectifier



Vishay Siliconix 로고
Vishay Siliconix
UB8BT 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
U(F,B)8BT thru U(F,B)8DT
Vishay General Semiconductor
Ultrafast Rectifier
TO-220AC
ITO-220AC
2
U8xT
PIN 1
1
PIN 2
CASE
TO-263AB
K
UF8xT
PIN 1
PIN 2
2
1
PIN 1
PIN 2
1
UB8xT
K
2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
VF at IF = 8 A
TJ max.
8.0 A
100 V to 200 V
100 A
20 ns
0.79 V
150 °C
FEATURES
• Oxide planar chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters
and inverters for consumer computer, automotive and
telecommunication applications.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
U8BT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VF(AV)
IFSM
100
Isolation voltage (ITO-220AC only)
from terminals to heatsink t = 1 min
VAC
Operating junction and storage temperature range
TJ, TSTG
U8CT
150
8.0
100
1500
- 55 to + 150
U8DT
200
UNIT
V
V
A
V
°C
Document Number: 89086
Revision: 06-May-09
For technical questions within your region, please contact one of the following:
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


UB8BT 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
U(F,B)8BT thru U(F,B)8DT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage (1)
Reverse current (2)
Reverse recovery time
Reverse recovery time
Storage charge
IF = 5 A
IF = 8 A
IF = 20 A
TA = 25 °C
IF = 5 A
IF = 8 A
IF = 20 A
TA = 150 °C
Rated VR
TA = 25 °C
TA = 100 °C
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V,
Irr = 0.1 IRM
Reverse recovery time
Storage charge
IF = 8 A, dI/dt = 50 A/µs, VR = 30 V,
Irr = 0.1 IRM
Typical junction capacitance
4.0 V, 1 MHz
VF
IR
trr
trr
Qrr
trr
Qrr
CJ
0.90
0.96
1.12
0.72
0.79
0.99
-
200
15
19
7.1
23
6.5
25
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
1.02
-
-
0.86
-
10
500
20
-
-
-
-
-
UNIT
V
µA
ns
ns
nC
ns
nC
pF
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
U8XT
Typical thermal resistance from junction to case
RθJC
4.0
UF8XT
5.0
UB8XT
4.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AC
U8DT-E3/4W
1.83
ITO-220AC
UF8DT-E3/4W
1.69
TO-263AB
UB8DT-E3/4W
1.37
TO-263AB
UB8DT-E3/8W
1.37
PACKAGE CODE
4W
4W
4W
8W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
www.vishay.com
2
For technical questions within your region, please contact one of the following:
Document Number: 89086
Revision: 06-May-09
Datasheet pdf - http://www.DataSheet4U.net/




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UB8BT rectifier

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(UB8BT - UB8DT) Ultrafast Rectifier - Vishay Siliconix