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IXYS Corporation |
Three Phase
Rectifier Bridge
VUO 120
VUO 155
IdAVM = 121/157 A
VRRM = 1200-1600 V
VRRM Type
VV
VRRM Type
1200 VUO 120-12 NO1 1600 VUO 120-16 NO1
1200 VUO 155-12 NO1 1600 VUO 155-16 NO1
A6
E6
K6
M1/O1
W5
option
W6
M10/O10
Symbol
VRRM
IdAVM
IFSM
I2t
Ptot
TVJ
TVJM
Tstg
VISOL
Md
dS
dA
a
Weight
Test Conditions
TC = 75°C, sinusoidal 120°
Maximum Ratings
VUO 120 VUO155
1200/1600 1200/1600
121 157
V
A
TVJ = 45°C,
TVJ = 150°C,
TVJ = 45°C,
TVJ = 150°C,
t = 10 ms, VR = 0 V
t = 10 ms, VR = 0 V
t = 10 ms, VR = 0 V
t = 10 ms, VR = 0V
650
580
2110
1680
850
760
3610
2880
A
A
A
A
TC = 25°C per diode
150 190 W
-40...+150
150
-40...+125
°C
°C
°C
50/60 Hz
IISOL ≤ 1 mA
Mounting torque
t = 1 min
t=1s
(M5)
(10-32 unf)
3000
3600
2-2.5
18-22
V~
V~
Nm
lb.in.
Creep distance on surface
Strike distance in air
Maximum allowable acceleration
12.7
9.4
50
mm
mm
m/s2
typ. 80 g
Features
● Soldering connections for PCB
mounting
● Isolation voltage 3600 V~
● Convenient package outline
● UL registered E 72873
● Case and potting UL94 V-0
Applications
● Input Rectifier for Drive Inverters
Advantages
● Easy to mount with two screws
● Suitable for wave soldering
● High temperature and power cycling
capability
Dimensions in mm (1 mm = 0.0394")
Symbol
IR
VF
VF0
rT
RthJC
RthJH
R25 (option)
Test Conditions
VR = VRRM,
VR = VRRM,
IF = 150 A,
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
0.3 mA
5 mA
VUO 120
VUO 155
1.59 V
1.49 V
For power-loss calculations only
TVJ = 150°C
VUO 120
VUO 155
VUO 120
VUO 155
0.80 V
0.75 V
6.1 mΩ
4.6 mΩ
per diode
VUO 120
VUO 155
VUO 120
VUO 155
1.0 K/W
0.8 K/W
1.3 K/W
1.1 K/W
Siemens S 891/2,2/+9
2.2 kΩ
IXYS reserves the right to change limits, test conditions and dimensions
© 2002 IXYS All rights reserved
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VUO 120
150
A
120
IF
90
60
TVJ = 150°C
TVJ = 25°C
30
700
A 50 Hz, 80% VRRM
600
IFSM
500
TVJ = 45°C
400
300
200
100 TVJ = 150°C
0
0.0 0.5 1.0 1.5 V 2.0
VF
Fig. 1 Forward current versus voltage
drop per diode
150
W
Ptot
100
0
0.001
0.01
0.1 s
t
Fig. 2 Surge overload current
1
RthKA:
0.7 KW
1 KW
1.4 KW
2 KW
3 KW
5 KW
50
104
A2s VR = 0 V
I2t
TVJ = 45°C
TVJ = 150°C
103
1 2 3 4 5 6 7 m8s910
t
Fig. 3 I2t versus time per diode
140
A
120
100
Id(AV)M
80
60
40
20
0
0 20 40 60 80 100 120 A 0 20 40 60 80 100 120 140 °C
Id(AV)M
Tamb
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 120°
1.2
K/W
1.0
0
0 20 40 60 80 100 120 140 °C
TC
Fig. 5 Max. forward current versus
case temperature
0.8
0.6
0.4
0.2
0.0
0.01
0.1
Fig. 6 Transient thermal impedance junction to case
1
Constants for ZthJC calculation:
s
t
VUO 120
10
i
1
2
3
4
Rthi (K/W)
0.003521
0.1479
0.5599
0.2887
ti (s)
0.01
0.05
0.14
0.5
© 2002 IXYS All rights reserved
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