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DS1-12D 반도체 회로 부품 판매점

Rectifier Diode Avalanche Diode



IXYS Corporation 로고
IXYS Corporation
DS1-12D 데이터시트, 핀배열, 회로
Rectifier Diode
Avalanche Diode
DS 1
DSA 1www.DataSheet4U.com
VRRM = 1200-1800 V
IF(RMS) = 7 A
IF(AV)M = 2.3 A
VRSM
V
V(BR)min x VRRM
VV
1300
1700
1900
1300
1750
1950
1200
1600
1800
x Only for Avalanche Diodes
Standard
Type
DS 1-12D
Avalanche
Types
DSA 1-12D
DSA 1-16D
DSA 1-18D
A
C
A
C
A = Anode C = Cathode
Symbol
IFRMS
IF(AV)M
PRSM
IFSM
I2t
TVJ
TVJM
T
stg
Weight
Test Conditions
TVJ = TVJM
Tamb = 45°C; RthJA = 38 K/W; 180° sine
Tamb = 45°C; RthJA = 80 K/W; 180° sine
DSA types, TVJ = TVJM, tp = 10 µs
TVJ = 45°C;
V =0
R
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= 45°C
VR = 0
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
7A
2.3 A
1.3 A
1.6 kW
110 A
118 A
100 A
104 A
60 A2s
58 A2s
50 A2s
45 A2s
-40...+150
150
-40...+150
°C
°C
°C
0.8 g
Features
q Plastic standard package
q Planar glassivated chips
Applications
q Low power rectifiers
q Field supply for DC motors
q Power supplies
q High voltage rectifiers
Advantages
q Space and weight savings
q Simple PCB mounting
q Improved temperature and power
cycling
q Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol
IR
VF
VT0
r
T
RthJA
dS
dA
a
Test Conditions
Characteristic Values
TVJ = TVJM; VR = VRRM
IF = 7 A; TVJ = 25°C
For power-loss calculations only
T =T
VJ VJM
Forced air cooling with 1.5 m/s, Tamb = 45°C
Soldered on to PC board, Tamb= 45°C
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
£ 0.7 mA
£ 1.3
V
0.8 V
67 mW
38 K/W
80 K/W
8.5 mm
6.7 mm
100 m/s2
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-1




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DS1-12D rectifier

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DS1-12D

Rectifier Diode Avalanche Diode - IXYS Corporation