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Vishay Siliconix |
New Product
V40150C, VF40150C, VB40150C & VI40150C
Vishay Generawl wSwe.DmataicShoenetd4Uu.ccotmor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V40150C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VF40150C
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB40150C
PIN 1
K
PIN 2
HEATSINK
3
2
1
VI40150C
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
2 x 20 A
150 V
160 A
0.75 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V40150C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(Fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
Operating junction and storage temperature range
TJ, TSTG
VF40150C VB40150C
150
40
20
160
1500
- 55 to + 150
VI40150C
UNIT
V
A
A
V
°C
Document Number: 89048 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
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New Product
V40150C, VF40150C, VB40150C & VI40150C
Vishay General Semiconductor
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ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR 150 (minimum)
Instantaneous forward voltage per diode (1)
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
TA = 25 °C
TA = 125 °C
VF
0.69
0.84
1.15
0.55
0.64
0.75
Reverse current per diode (2)
VR = 100 V
VR = 150 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
2
2.5
-
5
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40150C
VF40150C
Typical thermal resistance per diode
RθJC
1.8
4
VB40150C
1.8
MAX.
-
-
-
1.43
-
-
0.82
-
-
250
25
VI40150C
1.8
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V40150C-E3/4W
1.89
ITO-220AB
VF40150C-E3/4W
1.75
TO-263AB
VB40150C-E3/4W
1.39
TO-263AB
VB40150C-E3/8W
1.39
TO-262AA
VI40150C-E3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
50
Resistive or Inductive Load
40
V(B,I)40150C
30
VF40150C
20
10
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 89048
Revision: 19-May-08
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