파트넘버.co.kr EU2 데이터시트 PDF


EU2 반도체 회로 부품 판매점

(EU2A - EU2YX) HIGH EFFICIENCY RECTIFIER



Galaxy Semi-Conductor 로고
Galaxy Semi-Conductor
EU2 데이터시트, 핀배열, 회로
BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
EwUww2.YDaXta(ZSh)e-e-t4-UE.cUom2A(Z)
VOLTAGE RANGE: 100 --- 600 V
CURRENT: 1.0---1.2 A
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Alcohol,Is opropanol
and sim ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--41,m olded plastic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Mounting pos ition: Any
DO - 41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
EU2YX
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
V R MS
VDC
Maximum average f orw ard rectified current
9.5mm lead length,
Peak f orw ard surge current
@TA=75
IF (AV)
8.3ms single half -sine-w ave
IF SM
superimposed on rated load @TJ=125
Maximum instantaneous f orw ard voltage
@ IF=IF(AV)
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
VF
IR
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance (Note2)
CJ
Typical thermal resistance
(Note3)
Rθ J A
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A,IR=1A,Irr=0.25A
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Therm al resistance junction to ambient.
100
70
100
1.2
25.0
0.90
50
EU2Z
200
140
200
EU2
400
210
400
1.0
15.0
1.40
10.0
300.0
100
20
60
- 55 ----- + 150
- 55 ----- + 150
EU2A
600
420
600
UNITS
V
V
V
A
A
V
A
ns
15 pF
/W
www.galaxycn.com
Document Number 0262035
BLGALAXY ELECTRICAL
1.


EU2 데이터시트, 핀배열, 회로
RATINGS AND CHARACTERISTIC CURVES
EU2YX(Z)---EU2A(Z)
www.DataSheet4U.com
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 10
N 1. N 1.
+0.5A
trr
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
PULSE
GENERATOR
(NOTE2)
0
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ
2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIMEBASEFOR10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
10
TJ=25
Pulse Width=300µS
1.0
EU2YX
0.1
0.04
EU2Z,EU2,EU2A
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE
1.5
1.2
Single Phase
0.9 Half Wave 60Hz
Resistive or
Inductive Load
0.6
0.3
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT
30
8.3ms Single Half
S ine-W ave
20
EU2YX
10
E U 2Z ,E U 2 ,E U 2A
0
1
5 10
50
NUMBER OF CYCLES AT 60Hz
FIG.5 -- TYPICAL JUNCTION CAPACITANCE
200
100
60 EU2A
40
20
10
EU2YX,EU2,EU2Z
4
TJ=25
2
1
0.1 0.2 0.4 1 2
4
10 20 40 100
REVERSE VOLTAGE,VOLTS
Document Number 0262035
BLGALAXY ELECTRICAL
www.galaxycn.com
2.




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