MP04HB910 반도체 회로 부품 판매점
Dual Rectifier Diode Module Preliminary Information
|
|
 Dynex Semiconductor |
MP04HB910
FEATURES
s Dual Device Module
s Electrically Isolated Package
s Pressure Contact Construction
s International Standard Footprint
s Alumina (Non-toxic) Isolation Medium
MP04HB910
Dual Rectifier Diode Module
Preliminary Information
DS5425-1.2 February 2001
KEY PARAMETERS
VRRM
IF(AV)
IFSM (per arm)
IF(RMS)
Visol
3000V
915A
20000A
1440A
3000V
APPLICATIONS
s Power Supplies
s Large IGBT Circuit 'Front Ends'
s Rectifiers
s Battery Chargers
VOLTAGE RATINGS
Type Number
MP04HB910-30
MP04HB910-28
MP04HB910-26
MP04HB910-24
Repetitive Peak
Voltages
VDRM VRRM
V
3000
2800
2600
2400
Conditions
Tvj = –40˚ to 150˚C,
VRSM = VRRM + 100V
Lower voltage grades available
www.DataSheet4U.com
12
3
Fig.1 HB circuit configuration
ORDERING INFORMATION
Order As:
MP04HB910-XX
XX shown in the part number about represents VRRM/100
selection required.
Note: When ordering, please use the complete part number.
Please quote full part number in all correspondance.
www.dynexsemi.com
Outline type code: MP04
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
1/7
MP04HB910
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Symbol
IF(AV)
Parameter
Mean forward current
IF(RMS)
RMS value
IFSM Surge (non-repetitive) forward current
I2t I2t for fusing
IFSM Surge (non-repetitive) forward current
I2t I2t for fusing
V Isolation voltage
isol
Conditions
Max. Units
Half wave resistive load
Tcase = 75oC
Tcase = 85oC
915
830
A
A
Tcase = 100oC
695
Tcase = 75oC
1440
Tcase = 85oC
1305
Tcase = 100oC
1090
10ms half sine; Tj = 150oC
20
VR = 0
2.0 x 106
A
A
A
A
kA
A2s
10ms half sine; Tj = 150oC
VR = 50% VRRM
16 kA
1.28 x 106 A2s
Commoned terminals to base plate AC RMS, 1 min, 50Hz 3000
V
THERMAL AND MECHANICAL DATA
wwSwy.DmabtaoSlheet4U.com
Parameter
Rth(j-c)
Thermal resistance - junction to case
(per diode)
Tvj Virtual junction temperature
T Storage temperature range
stg
- Screw torque
- Weight (nominal)
Conditions
dc
Halfwave
3 Phase
Reverse (blocking)
-
Mounting
Electrical connections
-
Min. Max. Units
- 0.056 oC/W
- 0.060 oC/W
- 0.066 oC/W
- 150 oC
–40 150
oC
6 (53) - Nm (lb.ins)
- 12 (106) Nm (lb.ins)
- 1580 g
2/7
www.dynexsemi.com
|
PDF 파일 내의 페이지 : 총 7 페이지
제조업체: Dynex Semiconductor
( dynex )
MP04HB910 rectifier
데이터시트 다운로드 :
[ MP04HB910.PDF ]
[ MP04HB910 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
