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KODENSHI KOREA |
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Sensitive Gate Silicon Controlled Rectifiers
Features
◇ Repetitive Peak Off-State Voltage : 400V
◇ R.M.S On-State Current (IT(RMS)=0.8 A)
◇ Low On-State Voltage (1.2V(Typ.)@ITM)
General Description
Sensitive triggering SCR is suitable for the application
where gate current limited such as small motor control,
gate driver for large SCR, sensing and detecting circuits.
KK100-6
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
Parameter
VDRM Repetitive Peak Off-state Voltage
IT(AV) Average On-State Current
IT(RMS) R.M.S On-State Current
ITSM Surge On-State Current
I2 t
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
I²t for Fusing
Forward Peak Gate Power
Dissipation
Forward Average Gate Power
Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Condition
Half Sine Wave : TC =74℃
All Conduction Angle
1/2 Cycle, 60Hz, Sine Wave Non-
Repetitive
t = 8.3ms
Ratings
400
0.5
0.8
Units
V
A
A
10 A
0.415
2
A² S
W
0.1 W
1A
5.0 V
-40 ~ 125 ℃
-40 ~ 150 ℃
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KK100-6
Electrical Characteristics
Symbol
Items
IDRM
Repetitive Peak Off-
State Current
VTM
Peak On-State
Voltage(1)
IGT
Gate Trigger
Current(2)
VGT
Gate Trigger
Voltage(2)
Non-Trigger Gate
VGD Voltage(1)
dv/dt
Critical Rate of Rise
Off-State Voltage
Conditions
Ratings
Min Typ Max
V =VAK DRM,
or VRRM:RGK=1000Ω
Tc=25℃
Tc=125℃
━
━
━ 10
━ 200
Unit
㎂
(ITM=1A, Peak)
VAK=6V, RL=100Ω
VD=7V, RL=100Ω
━ 1.2 1.7
Tc=25℃
Tc=-40℃
━
━
━ 200
━ 500
Tc=25℃
Tc=-40℃
━
━
━ 0.8
━ 1.2
V
㎂
V
VAK=12V, RL=100Ω
Tc=125℃
VD=Rated VDRM, Exponential wave-
form RGK=1000Ω TJ=125℃
0.2 ━ ━
500 800 ━
V
V/㎲
di/dt
IH
Rth(j-c)
Rth(j-a)
Critical Rate of Rise
Off-State Voltage
IPK=20A ; PW=10㎲;diG/dt=1A/㎲
lgt=20mA
━ ━ 50
Holding Current
Thermal Impedance
Thermal Impedance
VAK=12V, Gate Open
Initiating Current=20mA Tc=25℃
Tc=-40℃
━
━
Junction to case
━
Junction to Ambient
━
2 5.0
━ 10
━ 60
━ 150
A/㎲
mA
℃/W
℃/W
※ Notes :
1. Pulse Width ≤1.0ms, Duty cycle ≤1%
2. Does not include RGK in measurement.
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