STPR1020CG 반도체 회로 부품 판매점

ULTRA-FAST RECOVERY RECTIFIER DIODES



ST Microelectronics 로고
ST Microelectronics
STPR1020CG 데이터시트, 핀배열, 회로
® STPR1020CB/CG/CT/CF/CFP/CR
ULTRA-FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCTS CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
trr (max)
2x5A
200 V
150°C
0.99 V
30 ns
FEATURES
s SUITED FOR SMPS
s LOW LOSSES
s LOW FORWARD AND REVERSE RECOVERY
TIME
s HIGH SURGE CURRENT CAPABILITY
s INSULATED PACKAGES: ISOWATT220AB /
TO-220FPAB
Insulation Voltage = 2000V DC
Capacitance = 12 pF
A1
K
A2
A2
K
A1
TO-220AB
STPR1020CT
A2
A1 K
ISOWATT220AB
STPR1020CF
A2
K
A1
TO-220FPAB
STPR1020CFP
K
K A2
A1
DPAK
STPR1020CB
DESCRIPTION
Dual center tap rectifier suited for Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged in DPAK, D2PAK, I2PAK, TO-220AB,
TO-220FPAB or ISOWATT220AB, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE MAXIMUM (limiting values, per diode)
K
A2
A1
D2PAK
STPR1020CG
A2
K
A1
I2PAK
STPR1020CR
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
Tstg
Parameter
Repetitive peak reverse voltage
RMS forward
current
D2PAK / TO-220AB / ISOWATT220AB /
TO-220FPAB / I2PAK
DPAK
Average forward D2PAK / DPAK
current
TO-220AB / I2PAK
δ = 0.5
ISOWATT220AB
Tc=125°C Per diode
Tc=115°C Per device
TO-220FPAB
Tc=110°C Per device
Surge non repetitive forward current tp=10ms sinusoidal
Storage temperature range
Value
200
10
Unit
V
A
7A
5A
10
10
50
- 65 to + 150
A
°C
August 2002- Ed: 2E
1/10

STPR1020CG 데이터시트, 핀배열, 회로
STPR1020CB/CG/CT/CF/CFP/CR
THERMAL RESISTANCES
Symbol
Rth (j-c)
Junction to case
Parameter
TO-220AB / D2PAK / DPAK
I2PAK
Per diode
Total
ISOWATT220AB
Per diode
Total
TO-220FPAB
Per diode
Total
Rth (c)
Coupling
TO-220AB / D2PAK / DPAK / I2PAK
ISOWATT220AB
TO-220FPAB
When diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
Value
4.0
2.4
6.0
4.0
6.5
5
0.7
2.0
3.5
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF **
Parameters
Reverse leakage
current
Forward voltage
drop
Test conditions
Tj = 25°C
VR = VRRM
Tj = 100°C
Tj = 125°C
IF = 5 A
Tj = 125°C
IF = 10 A
Tj = 25°C
IF = 10 A
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation :
P = 0.78 x IF(AV) + 0.042 x IF2(RMS)
Min.
Typ.
0.8
0.95
Max.
50
0.6
0.99
1.20
1.25
Unit
µA
mA
V
RECOVERY CHARACTERISTICS
Symbol
trr Tj = 25°C
tfr Tj = 25°C
VFP Tj = 25°C
Test conditions
IF = 0.5A
IR = 1A
IF = 1A
VFR = 1.1 x VF max
IF = 1A
Irr = 0.25A
dIF/dt = 50 A/µs
dIF/dt = 50 A/µs
Min. Typ. Max. Unit
30 ns
20 ns
3V
2/10




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STPR1020CG rectifier

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