EF10C06C-G 반도체 회로 부품 판매점
(EF10C01C-G - EF10C06C-G) Glass Passivated Efficient Fast Recovery Rectifier
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 Comchip Technology |
www.DataSheet4U.com
Glass Passivated Efficient Fast Recovery Rectifier
EF10C01C-G thru EF10C06C-G (RoHS Device)
Voltage Range 50 to 600 V
Current 10.0 Ampere
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Mechanical Data
Case: Molded plastic TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208 guranteed
Mounting position: Any
Weight: 2.07 gram
TO-220AB
MAX.412(10.5) DIA
.154(3.91)
.148(3.74)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.594(15.1)
.587(14.9)
.16(4.06)
.14(3.56)
PIN
123
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
1
case
.105(2.67)
.095(2.41)
32
.025(0.64)
.014(0.35)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTIC
SYMBOL EF10C01C EF10C02C EF10C03C EF10C05C EF10C06C UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TL=100oC
VRRM
VRMS
VDC
IF(AV)
50
35
50
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 5.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to lead.
100 200 400 600 V
70 140 280 420 V
100 200 400 600 V
10.0 A
100 A
0.95 1.25
10
250
25
65
2.2
-55 to + 150
1.85
V
uA
uA
nS
pF
oCW
oC
COMCHIP TECHNOLOGY 4115 CLIPPER CT. FREMONT CA 94538 TEL: (510) 657-8671 FAX: (510) 657-8921
Glass Passivated Efficient Fast Recovery Rectifier
EF10C01C-G thru EF10C06C-G (RoHS Device)
RATINGS AND CHARACTERISTIC CURVES EF10C01C-G THRU EF10C06C-G
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
10 100
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
8 80
6 60
4 40
2
60 Hz Resistive or
Inductive load
0
0 50 100
AMBIENT TEMPERATURE, oC
150
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
EF10C01C-G-EF10C03C-G
1.0 EF10C05C-G
EF10C06C-G
0.1
0.01
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
0
1
10 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
TJ=125oC
100
10
1 TJ=25oC
0.1
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0 4.0 10
REVERSE VOLTAGE, VOLTS
100
COMCHIP TECHNOLOGY 4115 CLIPPER CT. FREMONT CA 94538 TEL: (510) 657-8671 FAX: (510) 657-8921
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EF10C06C-G rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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전력반도체 문의 : 010-3582-2743
관련 데이터시트
EF10C06C-G
(EF10C01C-G - EF10C06C-G) Glass Passivated Efficient Fast Recovery Rectifier - Comchip Technology
