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UHB20FCT 반도체 회로 부품 판매점

Dual Common-Cathode Ultrafast Recovery Rectifier



Vishay Siliconix 로고
Vishay Siliconix
UHB20FCT 데이터시트, 핀배열, 회로
www.DataSheet4U.com
UH20FCT& UHB20FCT
New Product Vishay General Semiconductor
Dual Common-Cathode Ultrafast Recovery Rectifier
TO-220AB
UH20FCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
2
1
UHB20FCT
PIN 1
K
PIN 2
HEATSINK
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
VF
Tj max
10 A x 2
300 V
180 A
25 ns
0.83 V
175 °C
FEATURES
• Oxide planar chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
• Solder Dip 260 °C, 40 seconds (for TO-220AB
package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency power factor correctors,
switching mode power supplies, free-wheeling diodes
and secondary dc-to-dc rectification application.
MECHANICAL DATA
Case: TO-220AB & TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current (see Fig.1)
Per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
per diode
IFSM
Operating junction and storage temperature range
TJ, TSTG
UH20FCT
UHB20FCT
300
20
10
180
- 55 to + 175
UNIT
V
A
A
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward voltage
per diode (1)
at IF = 5.0 A,
IF = 5.0 A,
at IF = 10 A,
IF = 10 A,
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VF
Maximum reverse current per diode (1)
at VR = 300 V
Tj = 25 °C
Tj = 125 °C
IR
TYP.
0.96
0.77
1.0
0.83
0.5
25
MAX.
-
-
1.2
0.90
5
150
UNIT
V
µA
Document Number 88964
10-Nov-06
www.vishay.com
1


UHB20FCT 데이터시트, 핀배열, 회로
UH20FCT& UHB20FCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum reverse recovery time
Maximum reverse recovery time per diode
Typical softness factor (tb/ta)
Typical reverse recovery current
Typical stored charge
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
at IF = 1.0 A, di/dt = 50 A/µs,
VR = 30 V, Irr = 0.1 IRM
at IF = 10 A, di/dt = 200 A/µs,
VR = 200 V, TJ = 125 °C
per diode
Typical forward recovery time per diode
Note:
at IF = 10 A, di/dt = 80 A/µs,
VFR = 1.1 x VFmax
trr
trr
S
IRM
Qrr
tfr
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
TYP.
20
28
0.36
7.0
160
150
MAX.
25
35
-
-
-
-
UNIT
ns
ns
-
A
nC
ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UH20FCT
Typical thermal resistance per diode
RθJC
2.0
UHB20FCT
2.0
UNIT
°C/W
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
TO-220AB
UH20FCT-E3/4W
TO-263AB
UHB20FCT-E3/4W
TO-263AB
UHB20FCT-E3/8W
UNIT WEIGHT (g)
1.88
1.38
1.38
PACKAGE CODE
4W
4W
8W
BASE QUANTITY
50/Tube
50/Tube
800/Reel
DELIVERY MODE
Tube
Tube
Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
20
16
12
8
4
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
12
11
10
9
8
7
6
5
4
3
2
1
0
0
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 0.8
D = 1.0
T
D - tp/T tp
2 4 6 8 10
Average Forward Current (A)
12
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
Document Number 88964
10-Nov-06




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Dual Common-Cathode Ultrafast Recovery Rectifier - Vishay Siliconix