NIS6111 반도체 회로 부품 판매점
Better Efficiency Rectifier System
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 ON Semiconductor |
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NIS6111
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Better Efficiency Rectifier
System
Ultra Efficient, High Speed Diode
The NIS6111 ORing diode is a high speed, high efficiency, hybrid
rectifier, designed for low voltage, high current systems, such as
those required for today’s digital circuits. It couples a high speed
integrated circuit with a power MOSFET to create a diode with the
same forward drop characteristics as a MOSFET. It offers increased
efficiency for switching power supplies as well as in ORing diode
applications.
It offers a low on resistance that can be further reduced by the
addition of external MOSFETs. It features the highest reverse
recovery speed of any device in the industry.
Features
• Low Forward Drop Improves System Efficiency
• Ultra High Speed
• Can be used in High Side and Low Side Configurations
• 24 V Rating
• Allows use of External MOSFETs for ExtendedDCautrareSnhteHeat4ndUli.ncgom
Capacity
Applications
• Redundant Power Supplies for High−Availability Systems
• Static ORing Diodes
• Low Voltage, Isolated Outputs
• Flyback, Forward Converter, Half Bridge Converters
PIN ASSIGNMENT
Pin Symbol
Function
1 Anode Power Input Connected to System
2 Internal Output of Internal Voltage Regulator provides power for
5.0 V internal only. No external components required at this pin.
3 Gate Gate Driver Output for Internal and External
N−Channel MOSFET
4 Cathode Power Output Connected to System
5 Reg In Input of Internal Voltage Regulator
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
MARKING
DIAGRAM
1
PLLP32
CASE 488AC
TBD
1 32
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
5ÇÇÇÇÇÇÇÇPÇÇÇÇÇÇÇÇIN1ÇÇÇÇÇÇÇÇCONÇÇÇÇÇÇÇÇNEÇÇÇÇÇÇÇÇCT4IÇÇÇÇÇÇÇÇONÇÇÇÇÇÇÇÇS 3
2
(Bottom View)
4
Cathode
5
Reg In
3
Gate
Anode
1
NTD110N02R
Figure 1. Equivalent Circuit
ORDERING INFORMATION
Device
Package
Shipping†
NIS6111QPT1
PLLP32 2000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DataSheet4U.com
© Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. P3
DataSheet4 U .com
1
Publication Order Number:
NIS6111/D
DataShee
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NIS6111
MAXIMUM RATINGS (TJ = 25°C, unless otherwise noted.)
Rating
Peak Repetitive Reverse Voltage (VK to VA)
Peak Regulator Input (Reg In) Voltage
Average Rectified Forward Current
Non−repetitive Peak Surge Current
Analog Die Thermal Resistance (Min Copper Area)
MOSFET Die Thermal Resistance (Min Copper Area)
Analog Die Thermal Resistance (Junction−to−Top of Board)
MOSFET Die Thermal Resistance (Junction−to−Top of Board)
Analog Die Thermal Resistance (Junction−to−Bottom of Board) (Note 4)
MOSFET Die Thermal Resistance (Junction−to−Bottom of Board) (Note 4)
Storage Temperature Range
Operating Temperature Range
Symbol
VRRM
Vregmax
IFAV
IFSM
qA j−a
qM j−a
qA j−t
qM j−t
qA j−b
qM j−b
Tstg
TJ
Value
24
28
30
90
83
78
4.9
0.6
30
7.0
−55 to 150
−20 to 125
Unit
V
V
A
A
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values
(not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage
may occur and reliability may be affected.
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NIS6111 rectifier
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