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VUB71 반도체 회로 부품 판매점

3-Phase Rectifier Birdge



IXYS 로고
IXYS
VUB71 데이터시트, 핀배열, 회로
www.DataSheet4U.com
VUB 71
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
VRRM = 1200-1600 V
IdAVM = 70 A
VRRM
V
1200
1600
Type
VUB 71-12 NO1
VUB 71-16 NO1
Symbol
Test Conditions
VRRM
IdAV
IdAVM
IFSM
I2t
Ptot
VCES
VGE
IC25
IC80
ICM
Ptot
VRRM
IFAV
IFRMS
IFRM
IFSM
TH = 110°C, sinusoidal 120°
limited by leads
TVJ = 45°C, t = 10 ms, VR = 0 V
T
VJ
=
150°C,
t
=
10
ms,
V
R
=
0
V
TVJ = 45°C, t = 10 ms, VR = 0 V
TVJ = 150°C, t = 10 ms, VR = 0V
TH = 25°C per diode
TVJ = 25°C to 150°C
Continuous
TH = 25°C, DC
TH = 80°C, DC
tp = Pulse width limited by TVJM
TH = 80°C
TH = 80°C, rectangular d = 0.5
TH = 80°C, rectangular d = 0.5
TH = 80°C, tP = 10 ms, f = 5 kHz
TVJ = 45°C, t = 10 ms
T
VJ
= 150°C, t = 10 ms
Ptot TH = 25°C
TVJ
T
VJM
Tstg
VISOL
50/60 Hz
I
ISOL
£
1
mA
t = 1 min
t=1s
Md
Weight
Mounting torque
typ.
(M5)
(10-32 unf)
Dwatwa awcco.rDdinag ttoaISECh60e7e47t4U.com
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
12 45
Maximum Ratings
1200 / 1600
59
70
V
A
A
530
475
1400
1130
A
A
A
A
90 W
1200
± 20
V
V
43 A
29 A
90 A
160 W
1200
9
14
90
V
A
A
A
75 A
60 A
67
9 10
Features
q Soldering connections for PCB
mounting
q Isolation voltage 3600 V~
q Ultrafast freewheeling diode
q Convenient package outline
q UL registered E 72873
q Thermistor
Applications
q Drive Inverters with brake system
Advantages
q 2 functions in one package
q No external isolation neccessary
q Easy to mount with two screws
q Suitable for wave soldering
q High temperature and power cycling
capability
Dimensions in mm (1 mm = 0.0394")
40
-40...+150
150
-40...+125
3000
3600
2-2.5
18-22
35
W
°C
°C
°C
V~
V~
Nm
lb.in.
g
1-2


VUB71 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Symbol
I
R
VF
VT0
rT
RthJH
Test Conditions
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
V =V ,
R RRM
VR = VRRM,
IF = 25 A,
T=
VJ
25°C
TVJ = 150°C
TVJ = 25°C
0.1 mA
3 mA
1.3 V
For power-loss calculations only
TVJ = 150°C
0.85 V
8.5 mW
per diode
1.42 K/W
V
BR(CES)
VGE(th)
V = 0 V, I = 3 mA
GS C
IC = 10 mA
1200
5
IGES VGE = ± 20 V
ICES TVJ = 25°C, VCE = VCES
TVJ = 125°C, VCE = 0.8 VCES
VCEsat
VGE = 15 V, IC = 25 A
tSC
(SCSOA)
VGE = 15 V, VCE = 600 V, TVJ = 125°C,
RG = 22 W, non repetitive
RBSOA
V = 15
GE
V,
V
CE
=
800 V,
T
VJ
=
125°C,
RG = 22 W, Clamped Inductive load, L = 100 mH
Cies VCE = 25 V, f = 1 MHz, VGE = 0 V
4.5
td(on)
td(off)
tfi
Eon
Eoff
VCE = 600 V, IC = 25 A
VGE = 15 V, RG = 22 W
Inductive load; L = 100 mH
T
VJ
=
125°C
300
350
1600
6
8
RthJH
I
R
V
R
=V ,
RRM
T=
VJ
25°C
VR = 800 V, TVJ =150°C
4
VF IF = 12 A, TVJ = 25°C
VT0 For power-loss calculations only
rT TVJ = 150°C
IRM IF = 25 A, -diF/dt = 100 A/ms
V = 100 V
R
6.5
t
rr
I
F
= 1 A,
-di /dt
F
=
100
A/ms
VR = 30 V
50
RthJH
R25 Siemens Typ S 891/2,2k/+9
dS Creep distance on surface
dA Strike distance in air
a Maximum allowable acceleration
www.DataSheet4U.com
V
8V
500 nA
700 mA
1.5 mA
2.9 V
10 ms
50 A
nF
ns
ns
ns
mJ
mJ
0.8 K/W
0.2 mA
6 mA
2.7 V
1.65 V
46 mW
7A
70 ns
3.12 K/W
2,2 kW
12.7 mm
9.4 mm
50 m/s2
© 2000 IXYS All rights reserved
VUB 71
2-2




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VUB71 rectifier

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