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Electronic Devices |
U.com VT RVTHIGH VOLTAGE 50 mA
t4 SILICON RECTIFIERS
SheeSMALL SIZE MOLDED PACKAGE
taPRV 10,000 TO 15,000 VOLTS
aFAST RECOVERY (R_SERIES)
.DAVALANCHE CHARACTERISTICS
wLOW LEAKAGE
ww omEDI
.cType
PRV
Volts
REVERSE RECOVERY TIME
(Fig.4)
VT1000
UVT1200
t4VT1500
RVT1000
eRVT1200
RVT1500
10,000
12,000
15,000
10,000
12,000
15,000
-
-
-
100 ns max.
100 ns max.
100 ns max.
heELECTRICAL CHARACTERISTICS (at TA=25 oC Unless Otherwise Specified)
SAverage Rectified Forward Current @ 50oC, IO
taMax. Peak Surge Current, IFSM (8.3ms)
aMax.ForwardVoltageDrop@50mA, VF
.DMax. DC Reverse Current @ PRV and 25oC, IR
Max. DC Reverse Current @ PRV and100oC, IR
wwAmbient Operating Temperature Range, TA
w mStorage Temperature Range, TSTG
50 mA
5 Amp
28Volts
1A
25 A
-55 to + 125oC
-55 to + 150oC
U.coNOTES:
et41.It is recommended that a proper heat sink be used on the terminals of this device between the body and
esoldering point to prevent damage from excess heat.
taSh2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated.
www.DaEDI reservesthe rightto changethese specificationsat any time withoutnotice.
FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
100
75
50
25
0
0
25 50
75 100 125
AMBIENT TEMPERATURE (OC)
150
VT RVT
FIG.2
NON- REPETITIVE SURGE CURRENT
0.1SEC
1.0SEC
100
75
50
25
0
1
2 3 4 5 6 7 8 9 10
20 30 40 50 60
CYCLES(60 Hz)
FIG.3
MECHANICAL
Leads-solid silver
A LEAD DIA.
D
Markings-Cathode band
and device type
C
B MIN.
FIG.4
REVERSE RECOVERY TEST METHOD
INCHES
A 0.02
B 0.60
C 0.50
D 0.16
MM
0.5
15.2
12.7
4.0
RECOVERY WAVE FORM
Trr
I F=2MA
I R=5MA
I RR=1MA
-
RECOVERY WA VE FORM
1000
NI
0.1
D.U.T.
PULSE
GENERATOR
50
NI
SCOPE
WAVE FORMS
CIRCUIT
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828
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