STPR320 반도체 회로 부품 판매점

ULTRA-FAST RECOVERY RECTIFIER DIODES



ST Microelectronics 로고
ST Microelectronics
STPR320 데이터시트, 핀배열, 회로
® STPR320
ULTRA-FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
trr (max)
3A
200 V
150°C
0.99 V
30 ns
FEATURES
SUITED FOR SMPS
LOW LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIME
HIGH SURGE CURRENT CAPABILITY
DESCRIPTION
Low cost single chip rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in F126, this device is intended for use
in low voltage, high frequency inverters, free
wheeling and polarity protection applications.
ABSOLUTE MAXIMUM (limiting values)
Symbol
VRRM
IF(AV)
Parameter
Repetitive peak reverse voltage
Average forward current
IFSM Surge non repetitive forward current
Tstg Storage temperature range
Tj Maximum operating junction temperature
F126
(JEDEC DO-204AC)
Tl=60°C
δ = 0.5
tp=10ms
sinusoidal
Value
200
3
Unit
V
A
30 A
- 65 to + 150
150
°C
°C
October 1999- Ed:1A
1/5

STPR320 데이터시트, 핀배열, 회로
STPR320
THERMAL RESISTANCE
Symbol
Rth (j-l)
Parameter
Junction lead (L=5mm)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameters
Test conditions
IR * Reverse leakage
current
VF ** Forward voltage
drop
Tj = 25°C
Tj = 100°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
VR = VRRM
IF = 3 A
IF = 6 A
IF = 6 A
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation :
P = 0.78 x IF(AV) + 0.070 x IF2(RMS)
Value
25
Unit
°C/W
Min.
Typ.
0.2
0.8
0.95
Max.
10
0.5
0.99
1.20
1.25
Unit
µA
mA
V
RECOVERY CHARACTERISTICS
Symbol
trr Tj = 25°C
tfr Tj = 25°C
VFP Tj = 25°C
Test conditions
IF = 0.5A
IR = 1A
IF = 3A
VFR = 1.1 x VF max
IF = 3A
Irr = 0.25A
dIF/dt = 50 A/µs
dIF/dt = 50 A/µs
Min. Typ. Max. Unit
30 ns
20 ns
3V
Fig. 1 : Average forward power dissipation versus Fig. 2 : Peak current versus form factor.
average forward current.
2/5




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STPR320 rectifier

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