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IRL3103D1S 반도체 회로 부품 판매점

MOSFET & SCHOTTKY RECTIFIER



International Rectifier 로고
International Rectifier
IRL3103D1S 데이터시트, 핀배열, 회로
PD- 9.1558A
IRL3103D1S
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l Co-packaged HEXFET® Power MOSFET
D
and Schottky Diode
l Generation 5 Technology
VDSS = 30V
l Logic Level Gate Drive
l Minimize Circuit Inductance
RDS(on) = 0.014
l Ideal For Synchronous Regulator Application G
ID = 64A
S
Description
The FETKY family of co-packaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5 MOSFET
with a low forward voltage drop Schottky diode and
minimized component interconnect inductance and
resistance result in maximized converter efficiencies.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10Vƒ
Continuous Drain Current, VGS @ 10Vƒ
Pulsed Drain Current ƒ
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
D 2 Pak
Max.
64
45
220
3.1
89
0.56
± 16
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.4
40
T O -26 2
Units
A
W
W
W/°C
V
°C
Units
°C/W
4/2/98


IRL3103D1S 데이터시트, 핀배열, 회로
IRL3103D1S
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Ciss Input Capacitance
Min. Typ. Max. Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.037 ––– V/°C Reference to 25°C, ID = 1mAƒ
––– ––– 0.014
––– ––– 0.019
VGS = 10V, ID = 34A ‚
VGS = 4.5V, ID = 28A ‚
1.0 ––– ––– V VDS = VGS, ID = 250µA
23 ––– ––– S VDS = 25V, ID = 34Aƒ
––– ––– 0.10 mA VDS = 30V, VGS = 0V
––– ––– 22
VDS = 24V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 43
ID = 32A
––– ––– 14 nC VDS = 24V
––– ––– 23
VGS = 4.5V, See Fig. 6 ‚
––– 9.0 –––
VDD = 15V
––– 210 ––– ns ID = 32A
––– 20 –––
RG = 3.4Ω, VGS =4.5V
––– 54 –––
RD = 0.43 Ω, ‚ƒ
––– 7.5 –––
Between lead,
nH and center of die contact
––– 1900 –––
VGS = 0V
––– 810 –––
VDS = 25V
––– 240 –––
ƒ = 1.0MHz, See Fig. 5
––– 3500 –––
VGS = 0V, VDS = 0V
Body Diode & Schottky Diode Ratings and Characteristics
IF (AV)
ISM
VSD1
VSD2
trr
Qrr
ton
Parameter
( Schottky)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.0
A showing the
integral reverse
G
––– ––– 220
S
p-n junction and Schottky diode.
––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V ‚
––– ––– 0.50 V TJ = 25°C, IS = 1.0A, VGS = 0V ‚
––– 51 77
––– 49 73
ns TJ = 25°C, IF = 32A
nC di/dt = 100A/µs ‚
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
‚ Pulse width 300µs; duty cycle 2%.
ƒUses IRL3103D1 data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer
to application note #AN-994.




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