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IXYS Corporation |
Three Phase Half Controlled
Rectifier Bridge
VVZ 40
IdAVM = 43 A
VRRM = 1200-1600 V
V
RSM
VDSM
V
1300
1500
1700
V
RRM
VDRM
V
1200
1400
1600
Type
VVZ 40-12io1
VVZ 40-14io1
VVZ 40-16io1
1 63
2
5
7
4
8
1
23 4
5 67
8
Symbol
Test Conditions
Maximum Ratings
I
dAV
IdAVM
I ,I
FRMS TRMS
IFSM, ITSM
I2t
(di/dt)cr
(dv/dt)
cr
VRGM
PGM
PGAVM
TVJ
TVJM
Tstg
V
ISOL
M
d
Weight
T
K
=
100°C;
module
module
per leg
34
43
25
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
=
45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
repetitive, IT = 50 A
f =400 Hz, tP =200 µs
VD = 2/3 VDRM
I = 0.3 A,
non repetitive, I = 1/3 • I
G T dAV
diG/dt = 0.3 A/µs
T = T ; V = 2/3 V
VJ
VJM
DR
DRM
RGK = ∞; method 1 (linear voltage rise)
320
340
290
310
510
485
420
400
150
500
1000
10
TVJ = TVJM
IT = ITAVM
tp = 30 µs
tp = 500 µs
t = 10 ms
p
≤ 10
≤5
≤1
0.5
-40...+125
125
-40...+125
50/60 Hz, RMS
IISOL ≤ 1 mA
Mounting torque
typ.
t = 1 min
t=1s
(M5)
(10-32 UNF)
3000
3600
2-2.5
18-22
28
A
A
A
A
A
A
A
A2s
A2s
A2s
A2s
A/µs
A/µs
V/µs
V
W
W
W
W
°C
°C
°C
V~
V~
Nm
lb.in.
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
Features
q Package with DCB ceramic base plate
q Isolation voltage 3600 V~
q Planar passivated chips
q Soldering terminals
q UL registered E 72873
Applications
q Input rectifier for switch mode power
supplies (SMPS)
q Softstart capacitor charging
q Electric drives and auxiliaries
Advantages
q Easy to mount with two screws
q Space and weight savings
q Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
1-2
Symbol
IR, ID
V ,V
FT
VT0
r
T
VGT
IGT
VGD
I
GD
IL
IH
t
gd
t
q
Qr
RthJC
RthJH
dS
d
A
a
Test Conditions
Characteristic Values
VR = VRRM; VD = VDRM
TVJ = TVJM
TVJ = 25°C
I,
F
I
T
=
30
A,
T
VJ
=
25°C
For power-loss calculations only
(T
VJ
=
125°C)
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 125°C
TVJ = TVJM;
T =T ;
VJ VJM
VD = 2/3 VDRM
V = 2/3 V
D DRM
IG = 0.3 A; tG = 30 ms
diG/dt = 0.3 A/ms
TVJ = 25°C
TVJ = -40°C
TVJ = 125°C
TVJ = 25°C; VD = 6 V; RGK = ¥
T
VJ
=
25°C;
V
D
=
1/2
V
DRM
IG = 0.3 A; diG/dt = 0.3 A/ms
T
VJ
=
125°C;
I
T
=
15
A,
t
p
=
300
ms,
-di/dt
=
10
A/ms
VR = 100 V, dv/dt = 20 V/ms, VD = 2/3 VDRM
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
£ 5 mA
£ 0.3 mA
£ 1.33 V
0.85 V
15 mW
£ 1.0 V
£ 1.2 V
£ 65 mA
£ 80 mA
£ 50 mA
£ 0.2 V
£ 5 mA
£ 150 mA
£ 200 mA
£ 100 mA
£ 100 mA
£ 2 ms
typ. 150 ms
75 mC
1.0 K/W
0.17 K/W
1.6 K/W
0.27 K/W
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
7 mm
7 mm
50 m/s2
VVZ 40
© 2003 IXYS All rights reserved
2-2
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