파트넘버.co.kr VVZ40 데이터시트 PDF


VVZ40 반도체 회로 부품 판매점

Three Phase Half Controlled Rectifier Bridge



IXYS Corporation 로고
IXYS Corporation
VVZ40 데이터시트, 핀배열, 회로
Three Phase Half Controlled
Rectifier Bridge
VVZ 40
IdAVM = 43 A
VRRM = 1200-1600 V
V
RSM
VDSM
V
1300
1500
1700
V
RRM
VDRM
V
1200
1400
1600
Type
VVZ 40-12io1
VVZ 40-14io1
VVZ 40-16io1
1 63
2
5
7
4
8
1
23 4
5 67
8
Symbol
Test Conditions
Maximum Ratings
I
dAV
IdAVM
I ,I
FRMS TRMS
IFSM, ITSM
I2t
(di/dt)cr
(dv/dt)
cr
VRGM
PGM
PGAVM
TVJ
TVJM
Tstg
V
ISOL
M
d
Weight
T
K
=
100°C;
module
module
per leg
34
43
25
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
=
45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
repetitive, IT = 50 A
f =400 Hz, tP =200 µs
VD = 2/3 VDRM
I = 0.3 A,
non repetitive, I = 1/3 • I
G T dAV
diG/dt = 0.3 A/µs
T = T ; V = 2/3 V
VJ
VJM
DR
DRM
RGK = ; method 1 (linear voltage rise)
320
340
290
310
510
485
420
400
150
500
1000
10
TVJ = TVJM
IT = ITAVM
tp = 30 µs
tp = 500 µs
t = 10 ms
p
10
5
1
0.5
-40...+125
125
-40...+125
50/60 Hz, RMS
IISOL 1 mA
Mounting torque
typ.
t = 1 min
t=1s
(M5)
(10-32 UNF)
3000
3600
2-2.5
18-22
28
A
A
A
A
A
A
A
A2s
A2s
A2s
A2s
A/µs
A/µs
V/µs
V
W
W
W
W
°C
°C
°C
V~
V~
Nm
lb.in.
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
Features
q Package with DCB ceramic base plate
q Isolation voltage 3600 V~
q Planar passivated chips
q Soldering terminals
q UL registered E 72873
Applications
q Input rectifier for switch mode power
supplies (SMPS)
q Softstart capacitor charging
q Electric drives and auxiliaries
Advantages
q Easy to mount with two screws
q Space and weight savings
q Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
1-2


VVZ40 데이터시트, 핀배열, 회로
Symbol
IR, ID
V ,V
FT
VT0
r
T
VGT
IGT
VGD
I
GD
IL
IH
t
gd
t
q
Qr
RthJC
RthJH
dS
d
A
a
Test Conditions
Characteristic Values
VR = VRRM; VD = VDRM
TVJ = TVJM
TVJ = 25°C
I,
F
I
T
=
30
A,
T
VJ
=
25°C
For power-loss calculations only
(T
VJ
=
125°C)
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 125°C
TVJ = TVJM;
T =T ;
VJ VJM
VD = 2/3 VDRM
V = 2/3 V
D DRM
IG = 0.3 A; tG = 30 ms
diG/dt = 0.3 A/ms
TVJ = 25°C
TVJ = -40°C
TVJ = 125°C
TVJ = 25°C; VD = 6 V; RGK = ¥
T
VJ
=
25°C;
V
D
=
1/2
V
DRM
IG = 0.3 A; diG/dt = 0.3 A/ms
T
VJ
=
125°C;
I
T
=
15
A,
t
p
=
300
ms,
-di/dt
=
10
A/ms
VR = 100 V, dv/dt = 20 V/ms, VD = 2/3 VDRM
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
£ 5 mA
£ 0.3 mA
£ 1.33 V
0.85 V
15 mW
£ 1.0 V
£ 1.2 V
£ 65 mA
£ 80 mA
£ 50 mA
£ 0.2 V
£ 5 mA
£ 150 mA
£ 200 mA
£ 100 mA
£ 100 mA
£ 2 ms
typ. 150 ms
75 mC
1.0 K/W
0.17 K/W
1.6 K/W
0.27 K/W
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
7 mm
7 mm
50 m/s2
VVZ 40
© 2003 IXYS All rights reserved
2-2




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( ixys )

VVZ40 rectifier

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