파트넘버.co.kr SE1B 데이터시트 PDF


SE1B 반도체 회로 부품 판매점

SURFACE MOUNT HIGH EFFICIENT RECTIFIERS



EIC discrete 로고
EIC discrete
SE1B 데이터시트, 핀배열, 회로
SE1A -SE1M
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
SURFACE MOUNT
HIGH EFFICIENT RECTIFIERS
SMA (DO-214AC)
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
1.1 ± 0.3
1.2 ± 0.2
2.6 ± 0.15
2.1 ± 0.2
0.2 ± 0.07
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
2.0 ± 0.2
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL SE1A SE1B SE1D SE1E SE1G SE1J SE1K SE1M UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 300 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 300 400 600 800 1000 V
Maximum Average Forward Current Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
IF(AV)
IFSM
VF
IR
IR(H)
Trr
1.0
30
1.1
5
50
50
A
A
1.7 V
µA
µA
75 ns
Typical Junction Capacitance ( Note 2 )
CJ
50 pf
Junction Temperature Range
Storage Temperature Range
TJ
TSTG
- 65 to + 150
- 65 to + 150
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 2, 2002


SE1B 데이터시트, 핀배열, 회로
RATING AND CHARACTERISTIC CURVES ( SE1A - SE1M )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
+
50 Vdc
(approx)
D.U.T.
1
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
+ 0.5 A
0
- 0.25 A
Trr
- 1.0 A
SET TIME BASE FOR 25-35 ns/cm
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
0.8
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
8.3 ms SINGLE HALF SINE WAVE
24 Ta = 50 °C
0.6 18
0.4 12
0.2
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125
150
AMBIENT TEMPERATURE, ( °C)
175
6
0
1
2
4 6 10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
Pulse W idth = 300 µs
2% Duty Cycle
TJ = 25 °C
10
10
TJ = 100 °C
1.0
SE1A-SE1G
1.0
SE1J-SE1M
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01 0
20 40 60 80 100 120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
140
Page 2 of 2
Rev. 01 : April 2, 2002




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