파트넘버.co.kr P1000B 데이터시트 PDF


P1000B 반도체 회로 부품 판매점

Silicon Rectifiers



Diotec Semiconductor 로고
Diotec Semiconductor
P1000B 데이터시트, 핀배열, 회로
Silicon Rectifiers
Dimensions / Maße in mm
P 1000 A ... P 1000 M
Silizium Gleichrichter
Nominal current – Nennstrom
10 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50…1000 V
Plastic case
Kunststoffgehäuse
Ø 8 x 7.5 [mm]
P-600 Style
Weight approx. – Gewicht ca.
1.5 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
see page 16
Standard Lieferform gegurtet in Ammo-Pack siehe Seite 16
Maximum ratings
Type
Typ
P 1000 A
P 1000 B
P 1000 D
P 1000 G
P 1000 J
P 1000 K
P 1000 M
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
600
800
1000
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
50
100
200
400
600
800
1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50/C
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
TA = 25/C
Rating for fusing – Grenzlastintegral, t < 10 ms
TA = 25/C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
IFAV 10 A 1)
IFRM 80 A 1)
IFSM 400 A
i2t 800 A2s
Tj – 50…+175/C
TS – 50…+175/C
1) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
11.11.2003
1


P1000B 데이터시트, 핀배열, 회로
P 1000 A ... P 1000 M
Characteristics
Forward voltage – Durchlaßspannung
Leakage current – Sperrstrom
Tj = 25/C
Tj = 25/C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
IF = 5 A
VR = VRRM
Kennwerte
VF < 0.9 V
IR < 25 :A
RthA < 14 K/W 2)
2) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2 11.11.2003




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P1000B rectifier

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