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RBV1501 반도체 회로 부품 판매점

SILICON BRIDGE RECTIFIERS



EIC discrete Semiconductors 로고
EIC discrete Semiconductors
RBV1501 데이터시트, 핀배열, 회로
RBV1500 - RBV1510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 15 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V DC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
RBV25
3.9 ± 0.2
C3 30 ± 0.3 4.9 ± 0.2
3.2 ± 0.1
+ ~~
1.0 ± 0.1
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL
RBV
1500
VRRM
50
RBV
1501
100
RBV
1502
200
RBV
1504
400
RBV
1506
600
RBV
1508
800
RBV
1510
1000
UNIT
Volts
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C
I F(AV)
15 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
I FSM
I2t
300 Amps.
375 A2S
Maximum Forward Voltage per Diode at IF = 7.5 Amps. VF
1.1 Volts
Maximum DC Reverse Current
Ta = 25 °C
IR
10 µA
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
I R(H)
RθJC
TJ
200
1.9
- 40 to + 150
µA
°C/W
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate.
UPDATE : NOVEMBER 1,1998


RBV1501 데이터시트, 핀배열, 회로
RATING AND CHARACTERISTIC CURVES ( RBV1500 - RBV1510 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
18
HEAT-SINK MOUNTING, Tc
5" x 4" x 3" THK.
15 (12.7cm x 12.7cm x 7.3cm)
Al.-Finned plate
12
9
6
3
0
0
25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
250
200 TJ = 50 °C
150
100
50 8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)




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RBV1501 rectifier

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