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RBV1010 반도체 회로 부품 판매점

SILICON BRIDGE RECTIFIERS



EIC discrete Semiconductors 로고
EIC discrete Semiconductors
RBV1010 데이터시트, 핀배열, 회로
RBV1000 - RBV1010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 10 Amperes
RBV25
C3 30 ± 0.3
3.9 ± 0.2
4.9 ± 0.2
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V DC
* Ideal for printed circuit board
* Very good heat dissipation
3.2 ± 0.1
+ ~~
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 5.0 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
VRRM
VRMS
VDC
I F(AV)
IFSM
I2t
VF
IR
IR(H)
RθJC
TJ
T STG
RBV
1000
50
35
50
RBV
1001
100
70
100
RBV
1002
200
140
200
RBV
1004
400
280
400
10
RBV
1006
600
420
600
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
RBV
1008
800
560
800
RBV
1010
UNIT
1000 Volts
700 Volts
1000 Volts
Amps.
Amps.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : NOVEMBER 1,1998


RBV1010 데이터시트, 핀배열, 회로
RATING AND CHARACTERISTIC CURVES ( RBV1000 - RBV1010 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
12
10
8
6
4
HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK.
2 (8.2cm x 8.2cm x 0.3cm)
Al.-FINNED PLATE
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
250
200 TJ = 50 °C
150
100
50 8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)




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RBV1010 rectifier

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