파트넘버.co.kr RA2505 데이터시트 PDF


RA2505 반도체 회로 부품 판매점

Silicon Rectifier Button-Cells



ETC 로고
ETC
RA2505 데이터시트, 핀배열, 회로
Diotec
RA 2505 … RA 2510
Silicon Rectifier Button-Cells
Si-Gleichrichterzellen in Button-Bauform
Nominal current – Nennstrom
25 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50…1000 V
Plastic case,
coloured metal ring indicates cathode
Kunststoffgehäuse,
Kathode am farbig markierten Metallring
Ø 10 x 6.2 [mm]
Ø 5.6 ±0.1
Ø 10 ±0.3
Dimensions / Maße in mm
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9 g
Standard packaging: bulk
Standard Lieferform: Schüttgut
Maximum ratings
Type
Typ
RA 2505
RA 251
RA 252
RA 253
RA 254
RA 255
RA 256
RA 258
RA 2510
Repetitive peak reverse voltage
Periodische Spitzensperrspanng.
VRRM [V]
50
100
200
300
400
500
600
800
1000
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
80
130
250
350
450
550
650
850
1050
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TT = 100°C
f > 15 Hz
TA = 25°C
1) Valid, if the temperature of the terminals is kept to 100°C
Gültig, wenn die Temperatur der Kontaktflächen auf 100°C gehalten wird
70
IFAV
IFRM
i2t
25 A 1)
60 A 1)
1250 A2s
01.01.99


RA2505 데이터시트, 핀배열, 회로
RA 2505 … RA 2510
Diotec
Peak forward surge current, single half sine-wave,
superimposed on rated load
Stoßstrom für eine 50 Hz Sinus-Halbwelle,
überlagert bei Nennlast
TA = 25°C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
IFSM 500 A
Tj – 50…+150°C
TS – 50…+175°C
Characteristics
Forward voltage – Durchlaßspannung Tj = 25°C
Leakage current – Sperrstrom
Tj = 25°C
IF = 25 A
VR = VRRM
VF
IR
Kennwerte
< 0.95 V
< 10 µA
01.01.99
71




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RA2505 rectifier

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