파트넘버.co.kr R2000F 데이터시트 PDF


R2000F 반도체 회로 부품 판매점

HIGH VOLTAGE FAST RECOVERY RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere)



Rectron Semiconductor 로고
Rectron Semiconductor
R2000F 데이터시트, 핀배열, 회로
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HIGH VOLTAGE FAST RECOVERY RECTIFIER
R1200F
THRU
R2000F
VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere
FEATURES
*Fast switching
*Low leakage
*High current capability
*High surge capability
*High reliability
DO-41
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.35 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TA = 50oC
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
IFSM
TJ, TSTG
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 0.5A/0.2A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage TA = 25oC
Maximum Full Load Reverse Current Average, Full Cycle
.375”, (9.5mm) lead length at TL = 55oC
Maximum Reverse Recovery Time (Note)
NOTES : Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
SYMBOL
VF
IR
trr
R1200F
1200
840
1200
R1200F
1.0 (25.4)
MIN.
.034 (0.9) DIA.
.028 (0.7)
.205 (5.2)
.166 (4.2)
1.0 (25.4)
MIN.
.107 (2.7)
DIA.
.080 (2.0)
Dimensions in inches and (millimeters)
R1500F
1500
1050
1500
500
R1800F
1800
1260
1800
30
-65 to + 175
R2000F
2000
1400
2000
200
UNITS
Volts
Volts
Volts
mAmps
Amps
0C
R1500F
2.5
R1800F
5.0
100
500
R2000F
4.0
UNITS
Volts
uAmps
uAmps
nSec
2001-6


R2000F 데이터시트, 핀배열, 회로
RATING AND CHARACTERISTIC CURVES ( R1200F THRU R2000F )
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
500
400
Single Phase Half Wave
60Hz Inductive or
Resistive Load
300
200
R2000F
100
0
0 50 100 150 175
AMBIENT TEMPERATURE, ( )
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
70
60
8.3ms Single Half Sine-Wave
(JEDEC Method)
50
40
30
20
10
0
1
10 100
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
(+)
25 Vdc
(approx)
(-)
D.U.T
1
NON-
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
OSCILLOSCOPE
(NOTE 1)
(+)
NOTES1: Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
+0.5A
0
-0.25A
trr
-1.0A
1cm SET TIME BASE FOR
50/100 ns/cm
RECTRON




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R2000F rectifier

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