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RG10 반도체 회로 부품 판매점

SUPER FAST RECTIFIER DIODES



EIC discrete Semiconductors 로고
EIC discrete Semiconductors
RG10 데이터시트, 핀배열, 회로
RG10 - RG10Y
PRV : 70 - 600 Volts
Io : 1.0 - 1.5 Amperes
SUPER FAST RECTIFIER DIODES
D2
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Super fast recovery time
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.161 (4.1)
0.154 (3.9)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Peak Forward Surge Current,
Ta = 55 °C
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 A.
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
RG10Y
70
49
70
1.5
1.1
RG10
400
280
400
1.2
50
1.8
5
50
35
50
- 65 to + 150
- 65 to + 150
RG10A
600
420
600
1.0
UNITS
Volts
Volts
Volts
Amp.
Amps.
2.0 Volts
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
UPDATE : APRIL 23, 1998


RG10 데이터시트, 핀배열, 회로
RATING AND CHARACTERISTIC CURVES ( RG10 - RG10Y )
FIG.1 - REVERSE RECOVERY TIM E CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
+
50 Vdc
(approx)
D.U.T.
1
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
+ 0.5 A
0
- 0.25
Trr
- 1.0 A
SET TIME BASE FOR 15 ns/cm
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
100
80
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
40
60 30
40 20
20
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125
150
AMBIENT TEMPERATURE, ( °C)
175
10
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100 10
TJ = 100 °C
10
RG10Y
1.0
RG10
RG10A
1.0
0.1
TJ = 25 °C
0.1
Pulse Width = 300 µs
2% Duty Cycle
TJ = 25 °C
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
FORWARD VOLTAGE, VOLTS
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)




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RG10 rectifier

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