RS1002M 반도체 회로 부품 판매점
SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes)
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 Rectron Semiconductor |
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes
RS1001M
THRU
RS1007M
FEATURES
* Low leakage
* Low forward voltage
* Mounting position: Any
* Surge overload rating: 200 amperes peak
* Silver-plated copper leads
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
.995 (25.3)
.983 (24.7)
RS-10M
.189 (4.8)
.173 (4.4)
.150 (3.8)
.134 (3.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.057 (1.45)
.041 (1.05)
.083 (2.1)
.069 (1.7)
.043 (1.1)
.035 (0.9)
.114 (2.9)
.098 (2.5)
.031 (0.8)
.023 (0.6)
.303 (7.7) .303 (7.7) .303 (7.7)
.287 (7.3) .287 (7.3) .287 (7.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 100oC
with heatsink
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts
IO 10 Amps
IFSM
200 Amps
TJ,TSTG
-55 to + 150
0C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per element at 5.0A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@TA = 25oC
@TC = 100oC
SYMBOL
VF
IR
RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS
1.1 Volts
10 uAmps
0.2 mAmps
2001-5
RATING AND CHARACTERISTIC CURVES (RS1001M THRU RS1007M)
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
30
20
10
POWER DISSIPATION
34
sine wave
30 Tj=150
5
TC = 150 (TYP)
2
1
0.5
TC = 25 (TYP)
20
10
0.2 pulse test
per one diode
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE, (V)
SURGE FORWARD CURRENT CAPABILITY
200
sine wave
180 0
160
8.3ms 8.3ms
1 cycle
non-repetitive
140 Tj=25
120
100
80
60
12
5 10 20
NUMBER OF CYCLE
50 100
TYPICAL FORWARD CURRENT
DERATING CURVE
12
heatsink
Tc
Tc
10
0
0 2 4 6 8 10 12 14
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
TYPICAL FORWARD CURRENT
DERATING CURVE
3
on glass-epoxi substrate
2 P.C.B
sine wave
R-load
free in air
1
00 40 80 120
AMBIENT TEMPERATURE, ( )
160
CONTACT THERMAL RESISTANCE fcf
1.6
with thermal compound
1.5
8 1.4
sine wave
R-load
6
on heatsink
1.3
4 1.2
2 1.1
080 90 100 110 120 130 140 150 160
CASE TEMPERATURE, ( )
1
23456 78
MOUNTING TORQUE (Kg.cm)
RECTRON
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( rectron )
RS1002M rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes) - Rectron Semiconductor